Influence of vortex domain walls on magnetoresistance signals in Permalloy rings

Mei Feng Lai, Zung Hang Wei, Ching Ray Chang, J. C. Wu, J. H. Kuo, Jun Yang Lai

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47 Citations (Scopus)

Abstract

The magnetization reversal and the corresponding magnetoresistance of Permalloy rings are investigated here both numerically and experimentally. Micromagnetic simulations reveal that during the reversal process there exist three intermediate metastable states which lead to an unconventional triple-switching characteristic. Size effects are studied as well. The simulation results are in good agreement with our magnetoresistance measurements. Significant differences in the magnetoresistance at two orthogonal directions of the magnetic fields are observed and explained. An important contribution to the magnetoresistance due to the relative position of the domains and the current leads is also investigated.

Original languageEnglish
Article number104419
Pages (from-to)1044191-1044195
Number of pages5
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume67
Issue number10
Publication statusPublished - 2003 Mar 15

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Lai, M. F., Wei, Z. H., Chang, C. R., Wu, J. C., Kuo, J. H., & Lai, J. Y. (2003). Influence of vortex domain walls on magnetoresistance signals in Permalloy rings. Physical Review B - Condensed Matter and Materials Physics, 67(10), 1044191-1044195. [104419].