Influence of the contact resistance effect on the output characteristics of pentacene-based organic thin film transistors

Yow Jon Lin, Bo Chieh Huang

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We study the contact resistance effect in the temperature range of 300-350 K for pentacene-based organic thin film transistors using a simple resistance model. It is shown that the ratio of contact to channel resistance decreases with increasing temperature, implying that charge transport at 300 K may be limited by contact resistance. However, the device performance at 350 K can be limited more by the intrinsic transport physics in the pentacene itself than by contact physics. The linear gate-voltage-dependent output correlations may be used as a predictive tool to identify the source/drain ohmic quality.

Original languageEnglish
Pages (from-to)76-78
Number of pages3
JournalMicroelectronic Engineering
Volume103
DOIs
Publication statusPublished - 2013 Mar

Fingerprint

Thin film transistors
Contact resistance
contact resistance
transistors
Physics
physics
output
thin films
Charge transfer
Temperature
temperature
Electric potential
electric potential
pentacene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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Influence of the contact resistance effect on the output characteristics of pentacene-based organic thin film transistors. / Lin, Yow Jon; Huang, Bo Chieh.

In: Microelectronic Engineering, Vol. 103, 03.2013, p. 76-78.

Research output: Contribution to journalArticle

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