Abstract
We study the contact resistance effect in the temperature range of 300-350 K for pentacene-based organic thin film transistors using a simple resistance model. It is shown that the ratio of contact to channel resistance decreases with increasing temperature, implying that charge transport at 300 K may be limited by contact resistance. However, the device performance at 350 K can be limited more by the intrinsic transport physics in the pentacene itself than by contact physics. The linear gate-voltage-dependent output correlations may be used as a predictive tool to identify the source/drain ohmic quality.
| Original language | English |
|---|---|
| Pages (from-to) | 76-78 |
| Number of pages | 3 |
| Journal | Microelectronic Engineering |
| Volume | 103 |
| DOIs | |
| Publication status | Published - 2013 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
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Influence of the contact resistance effect on the output characteristics of pentacene-based organic thin film transistors. / Lin, Yow-Jon; Huang, Bo Chieh.
In: Microelectronic Engineering, Vol. 103, 01.01.2013, p. 76-78.Research output: Contribution to journal › Article
TY - JOUR
T1 - Influence of the contact resistance effect on the output characteristics of pentacene-based organic thin film transistors
AU - Lin, Yow-Jon
AU - Huang, Bo Chieh
PY - 2013/1/1
Y1 - 2013/1/1
N2 - We study the contact resistance effect in the temperature range of 300-350 K for pentacene-based organic thin film transistors using a simple resistance model. It is shown that the ratio of contact to channel resistance decreases with increasing temperature, implying that charge transport at 300 K may be limited by contact resistance. However, the device performance at 350 K can be limited more by the intrinsic transport physics in the pentacene itself than by contact physics. The linear gate-voltage-dependent output correlations may be used as a predictive tool to identify the source/drain ohmic quality.
AB - We study the contact resistance effect in the temperature range of 300-350 K for pentacene-based organic thin film transistors using a simple resistance model. It is shown that the ratio of contact to channel resistance decreases with increasing temperature, implying that charge transport at 300 K may be limited by contact resistance. However, the device performance at 350 K can be limited more by the intrinsic transport physics in the pentacene itself than by contact physics. The linear gate-voltage-dependent output correlations may be used as a predictive tool to identify the source/drain ohmic quality.
UR - http://www.scopus.com/inward/record.url?scp=84869888407&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84869888407&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2012.09.001
DO - 10.1016/j.mee.2012.09.001
M3 - Article
AN - SCOPUS:84869888407
VL - 103
SP - 76
EP - 78
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -