Influence of the contact resistance effect on the output characteristics of pentacene-based organic thin film transistors

Yow-Jon Lin, Bo Chieh Huang

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We study the contact resistance effect in the temperature range of 300-350 K for pentacene-based organic thin film transistors using a simple resistance model. It is shown that the ratio of contact to channel resistance decreases with increasing temperature, implying that charge transport at 300 K may be limited by contact resistance. However, the device performance at 350 K can be limited more by the intrinsic transport physics in the pentacene itself than by contact physics. The linear gate-voltage-dependent output correlations may be used as a predictive tool to identify the source/drain ohmic quality.

Original languageEnglish
Pages (from-to)76-78
Number of pages3
JournalMicroelectronic Engineering
Volume103
DOIs
Publication statusPublished - 2013 Jan 1

Fingerprint

Thin film transistors
Contact resistance
contact resistance
transistors
Physics
physics
output
thin films
Charge transfer
Temperature
temperature
Electric potential
electric potential
pentacene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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Influence of the contact resistance effect on the output characteristics of pentacene-based organic thin film transistors. / Lin, Yow-Jon; Huang, Bo Chieh.

In: Microelectronic Engineering, Vol. 103, 01.01.2013, p. 76-78.

Research output: Contribution to journalArticle

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AB - We study the contact resistance effect in the temperature range of 300-350 K for pentacene-based organic thin film transistors using a simple resistance model. It is shown that the ratio of contact to channel resistance decreases with increasing temperature, implying that charge transport at 300 K may be limited by contact resistance. However, the device performance at 350 K can be limited more by the intrinsic transport physics in the pentacene itself than by contact physics. The linear gate-voltage-dependent output correlations may be used as a predictive tool to identify the source/drain ohmic quality.

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