Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The advantages of blue InGaN light-emitting diodes with low bandgap energy and polarization-matched AlGaInN barriers are demonstrated numerically. Simulation results show that, besides the common benefit of enhanced electron- hole spatial overlap in the quantum well from the polarization-matched condition, the lower bandgap energy barriers can have additional advantages of more uniform carrier distribution among quantum wells while maintaining sufficient electron confinement. The internal quantum efficiencies of all the polarization-matched structures under study exhibit less severe efficiency droop, which is presumably attributed to the suppression of Auger recombination.

Original languageEnglish
Pages (from-to)1574-1576
Number of pages3
JournalOptics Letters
Volume37
Issue number9
DOIs
Publication statusPublished - 2012 May 1

Fingerprint

light emitting diodes
polarization
quantum wells
quantum efficiency
retarding
energy
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

@article{7f6267ba22d348cb88b29a08d1ed15a2,
title = "Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes",
abstract = "The advantages of blue InGaN light-emitting diodes with low bandgap energy and polarization-matched AlGaInN barriers are demonstrated numerically. Simulation results show that, besides the common benefit of enhanced electron- hole spatial overlap in the quantum well from the polarization-matched condition, the lower bandgap energy barriers can have additional advantages of more uniform carrier distribution among quantum wells while maintaining sufficient electron confinement. The internal quantum efficiencies of all the polarization-matched structures under study exhibit less severe efficiency droop, which is presumably attributed to the suppression of Auger recombination.",
author = "Chang, {Jih Yuan} and Kuo, {Yen Kuang}",
year = "2012",
month = "5",
day = "1",
doi = "10.1364/OL.37.001574",
language = "English",
volume = "37",
pages = "1574--1576",
journal = "Optics Letters",
issn = "0146-9592",
publisher = "The Optical Society",
number = "9",

}

Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes. / Chang, Jih Yuan; Kuo, Yen Kuang.

In: Optics Letters, Vol. 37, No. 9, 01.05.2012, p. 1574-1576.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of polarization-matched AlGaInN barriers in blue InGaN light-emitting diodes

AU - Chang, Jih Yuan

AU - Kuo, Yen Kuang

PY - 2012/5/1

Y1 - 2012/5/1

N2 - The advantages of blue InGaN light-emitting diodes with low bandgap energy and polarization-matched AlGaInN barriers are demonstrated numerically. Simulation results show that, besides the common benefit of enhanced electron- hole spatial overlap in the quantum well from the polarization-matched condition, the lower bandgap energy barriers can have additional advantages of more uniform carrier distribution among quantum wells while maintaining sufficient electron confinement. The internal quantum efficiencies of all the polarization-matched structures under study exhibit less severe efficiency droop, which is presumably attributed to the suppression of Auger recombination.

AB - The advantages of blue InGaN light-emitting diodes with low bandgap energy and polarization-matched AlGaInN barriers are demonstrated numerically. Simulation results show that, besides the common benefit of enhanced electron- hole spatial overlap in the quantum well from the polarization-matched condition, the lower bandgap energy barriers can have additional advantages of more uniform carrier distribution among quantum wells while maintaining sufficient electron confinement. The internal quantum efficiencies of all the polarization-matched structures under study exhibit less severe efficiency droop, which is presumably attributed to the suppression of Auger recombination.

UR - http://www.scopus.com/inward/record.url?scp=84862062170&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862062170&partnerID=8YFLogxK

U2 - 10.1364/OL.37.001574

DO - 10.1364/OL.37.001574

M3 - Article

C2 - 22555742

AN - SCOPUS:84862062170

VL - 37

SP - 1574

EP - 1576

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 9

ER -