Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors

Yu-Wu Wang, Horng Long Cheng, Yi Kai Wang, Tang Hsiang Hu, Jia Chong Ho, Cheng Chung Lee, Tan Fu Lei, Ching Fa Yeh

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.

Original languageEnglish
Pages (from-to)215-219
Number of pages5
JournalThin Solid Films
Volume467
Issue number1-2
DOIs
Publication statusPublished - 2004 Nov 22

Fingerprint

Thin film transistors
transistors
high vacuum
Carrier transport
air
traps
Vacuum
thin films
Air
Transistors
Grain boundaries
grain boundaries
Electric potential
electric potential
Electric properties
electrical properties
pentacene
estimates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Wang, Yu-Wu ; Cheng, Horng Long ; Wang, Yi Kai ; Hu, Tang Hsiang ; Ho, Jia Chong ; Lee, Cheng Chung ; Lei, Tan Fu ; Yeh, Ching Fa. / Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors. In: Thin Solid Films. 2004 ; Vol. 467, No. 1-2. pp. 215-219.
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Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors. / Wang, Yu-Wu; Cheng, Horng Long; Wang, Yi Kai; Hu, Tang Hsiang; Ho, Jia Chong; Lee, Cheng Chung; Lei, Tan Fu; Yeh, Ching Fa.

In: Thin Solid Films, Vol. 467, No. 1-2, 22.11.2004, p. 215-219.

Research output: Contribution to journalArticle

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AB - This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.

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