Abstract
This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.
| Original language | English |
|---|---|
| Pages (from-to) | 215-219 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 467 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 2004 Nov 22 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors. / Wang, Yu-Wu; Cheng, Horng Long; Wang, Yi Kai; Hu, Tang Hsiang; Ho, Jia Chong; Lee, Cheng Chung; Lei, Tan Fu; Yeh, Ching Fa.
In: Thin Solid Films, Vol. 467, No. 1-2, 22.11.2004, p. 215-219.Research output: Contribution to journal › Article
TY - JOUR
T1 - Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors
AU - Wang, Yu-Wu
AU - Cheng, Horng Long
AU - Wang, Yi Kai
AU - Hu, Tang Hsiang
AU - Ho, Jia Chong
AU - Lee, Cheng Chung
AU - Lei, Tan Fu
AU - Yeh, Ching Fa
PY - 2004/11/22
Y1 - 2004/11/22
N2 - This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.
AB - This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.
UR - http://www.scopus.com/inward/record.url?scp=4444320078&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4444320078&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2004.04.001
DO - 10.1016/j.tsf.2004.04.001
M3 - Article
AN - SCOPUS:4444320078
VL - 467
SP - 215
EP - 219
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 1-2
ER -