Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors

Yu Wu Wang, Horng Long Cheng, Yi Kai Wang, Tang Hsiang Hu, Jia Chong Ho, Cheng Chung Lee, Tan Fu Lei, Ching Fa Yeh

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Abstract

This work concerns the electrical properties and carrier transport behavior of polycrystalline pentacene-based thin film transistors (TFTs) in air and high-vacuum environments. The transistor in a high vacuum outperforms that in air. The dependence of the field-effect mobility on the gate voltage and the drain voltage is considered. A potential barrier model is applied to estimate the trap density of the pentacene transistor. The determined trap density at the grain boundaries of the pentacene film in air exceeds that in a high vacuum. These results show that the increased trap concentration at the grain boundaries in ambient air limits carrier transport.

Original languageEnglish
Pages (from-to)215-219
Number of pages5
JournalThin Solid Films
Volume467
Issue number1-2
DOIs
Publication statusPublished - 2004 Nov 22

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Wang, Y. W., Cheng, H. L., Wang, Y. K., Hu, T. H., Ho, J. C., Lee, C. C., Lei, T. F., & Yeh, C. F. (2004). Influence of measuring environment on the electrical characteristics of pentacene-based thin film transistors. Thin Solid Films, 467(1-2), 215-219. https://doi.org/10.1016/j.tsf.2004.04.001