Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy

K. H. Chang, C. P. Lee, Jenq-Shinn Wu, D. G. Liu, D. C. Liou

Research output: Contribution to journalArticle

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Abstract

Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.

Original languageEnglish
Pages (from-to)1640-1642
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number16
DOIs
Publication statusPublished - 1990 Dec 1

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aluminum gallium arsenides
indium
molecular beam epitaxy
atoms
photoluminescence

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chang, K. H. ; Lee, C. P. ; Wu, Jenq-Shinn ; Liu, D. G. ; Liou, D. C. / Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy. In: Applied Physics Letters. 1990 ; Vol. 57, No. 16. pp. 1640-1642.
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Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy. / Chang, K. H.; Lee, C. P.; Wu, Jenq-Shinn; Liu, D. G.; Liou, D. C.

In: Applied Physics Letters, Vol. 57, No. 16, 01.12.1990, p. 1640-1642.

Research output: Contribution to journalArticle

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