Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy

K. H. Chang, C. P. Lee, J. S. Wu, D. G. Liu, D. C. Liou

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Abstract

Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.

Original languageEnglish
Pages (from-to)1640-1642
Number of pages3
JournalApplied Physics Letters
Volume57
Issue number16
DOIs
Publication statusPublished - 1990 Dec 1

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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