Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy

K. H. Chang; C. P. Lee; J. S. Wu; D. G. Liu; D. C. Liou

doi:10.1063/1.104073

Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy

K. H. Chang, C. P. Lee, J. S. Wu, D. G. Liu, D. C. Liou

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.

Original language	English
Pages (from-to)	1640-1642
Number of pages	3
Journal	Applied Physics Letters
Volume	57
Issue number	16
DOIs	https://doi.org/10.1063/1.104073
Publication status	Published - 1990 Dec 1

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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AU - Chang, K. H.

AU - Lee, C. P.

AU - Wu, J. S.

AU - Liu, D. G.

AU - Liou, D. C.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.

AB - Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.

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