Abstract
Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.
| Original language | English |
|---|---|
| Pages (from-to) | 1640-1642 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 57 |
| Issue number | 16 |
| DOIs | |
| Publication status | Published - 1990 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy. / Chang, K. H.; Lee, C. P.; Wu, J. S.; Liu, D. G.; Liou, D. C.
In: Applied Physics Letters, Vol. 57, No. 16, 01.12.1990, p. 1640-1642.Research output: Contribution to journal › Article
TY - JOUR
T1 - Influence of indium doping on AlGaAs layers grown by molecular beam epitaxy
AU - Chang, K. H.
AU - Lee, C. P.
AU - Wu, J. S.
AU - Liu, D. G.
AU - Liou, D. C.
PY - 1990/12/1
Y1 - 1990/12/1
N2 - Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.
AB - Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.
UR - http://www.scopus.com/inward/record.url?scp=18544379940&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=18544379940&partnerID=8YFLogxK
U2 - 10.1063/1.104073
DO - 10.1063/1.104073
M3 - Article
AN - SCOPUS:18544379940
VL - 57
SP - 1640
EP - 1642
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
ER -