Abstract
Influence of indium doping on the qualities of AlGaAs layers grown by molecular beam epitaxy has been studied. It was found that a proper amount of In doping can increase the photoluminescence intensity drastically by a factor greater than 10 indicating an improvement in the optical quality of AlGaAs epilayers. The improvement in the material quality is attributed to a higher surface migration rate of In atoms than those of Ga and Al atoms leading to a reduction of group III vacancies. However, too great a concentration of In atoms leads to effects that may degrade the film quality.
Original language | English |
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Pages (from-to) | 1640-1642 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 57 |
Issue number | 16 |
DOIs | |
Publication status | Published - 1990 Dec 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)