Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions

K. M. Kuo, C. Y. Lin, C. T. Lin, G. Chern, C. T. Chao, Lance Horng, J. C. Wu, Teho Wu, C. Y. Huang, H. Ohyama, S. Isogami, M. Tsunoda, M. Takahashi

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Abstract

Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz3 MHz) and DC bias (-1 to 1 V) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to negative at the relaxation frequency ∼1/RC. A frequencydc bias (fV) "phase diagram" is mapped out to describe the combination effects of the magneto-impedance response. The decay of the tunnel magneto-resistance (TMR) and tunnel magneto-capacitance (TMC) at high voltage is sufficiently reduced by the double-MgO barrier. The V1 / 2 (the voltage that magnetic response drops to 1/2 of its maximum) of TMC reaches an average value of ∼1.35 V, which is larger than the V1 / 2 of TMR ∼0.95 V, suggesting that the response of TMC is more stable than TMR for high frequency application.

Original languageEnglish
Pages (from-to)1856-1859
Number of pages4
JournalSolid State Communications
Volume150
Issue number37-38
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

Tunnel junctions
tunnel junctions
tunnels
Tunnels
direct current
impedance
Magnetoresistance
Capacitance
capacitance
Electric potential
Phase diagrams
high voltages
phase diagrams
electric potential
decay

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Kuo, K. M. ; Lin, C. Y. ; Lin, C. T. ; Chern, G. ; Chao, C. T. ; Horng, Lance ; Wu, J. C. ; Wu, Teho ; Huang, C. Y. ; Ohyama, H. ; Isogami, S. ; Tsunoda, M. ; Takahashi, M. / Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions. In: Solid State Communications. 2010 ; Vol. 150, No. 37-38. pp. 1856-1859.
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Kuo, KM, Lin, CY, Lin, CT, Chern, G, Chao, CT, Horng, L, Wu, JC, Wu, T, Huang, CY, Ohyama, H, Isogami, S, Tsunoda, M & Takahashi, M 2010, 'Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions', Solid State Communications, vol. 150, no. 37-38, pp. 1856-1859. https://doi.org/10.1016/j.ssc.2010.06.008

Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions. / Kuo, K. M.; Lin, C. Y.; Lin, C. T.; Chern, G.; Chao, C. T.; Horng, Lance; Wu, J. C.; Wu, Teho; Huang, C. Y.; Ohyama, H.; Isogami, S.; Tsunoda, M.; Takahashi, M.

In: Solid State Communications, Vol. 150, No. 37-38, 01.10.2010, p. 1856-1859.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Influence of frequency and DC bias on magneto-impedance behaviors in double-MgO magnetic tunnel junctions

AU - Kuo, K. M.

AU - Lin, C. Y.

AU - Lin, C. T.

AU - Chern, G.

AU - Chao, C. T.

AU - Horng, Lance

AU - Wu, J. C.

AU - Wu, Teho

AU - Huang, C. Y.

AU - Ohyama, H.

AU - Isogami, S.

AU - Tsunoda, M.

AU - Takahashi, M.

PY - 2010/10/1

Y1 - 2010/10/1

N2 - Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz3 MHz) and DC bias (-1 to 1 V) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to negative at the relaxation frequency ∼1/RC. A frequencydc bias (fV) "phase diagram" is mapped out to describe the combination effects of the magneto-impedance response. The decay of the tunnel magneto-resistance (TMR) and tunnel magneto-capacitance (TMC) at high voltage is sufficiently reduced by the double-MgO barrier. The V1 / 2 (the voltage that magnetic response drops to 1/2 of its maximum) of TMC reaches an average value of ∼1.35 V, which is larger than the V1 / 2 of TMR ∼0.95 V, suggesting that the response of TMC is more stable than TMR for high frequency application.

AB - Magneto-impedance (MI) of a double-barrier MgO magnetic tunnel junction (DMTJ) is measured as a function of frequency (20 Hz3 MHz) and DC bias (-1 to 1 V) under magnetic parallel and antiparallel states. A strong nonlinear effect is observed at all frequencies and the MI changes from positive to negative at the relaxation frequency ∼1/RC. A frequencydc bias (fV) "phase diagram" is mapped out to describe the combination effects of the magneto-impedance response. The decay of the tunnel magneto-resistance (TMR) and tunnel magneto-capacitance (TMC) at high voltage is sufficiently reduced by the double-MgO barrier. The V1 / 2 (the voltage that magnetic response drops to 1/2 of its maximum) of TMC reaches an average value of ∼1.35 V, which is larger than the V1 / 2 of TMR ∼0.95 V, suggesting that the response of TMC is more stable than TMR for high frequency application.

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