Influence of barrier structure on polarization effect in near ultraviolet light-emitting diodes

Yen Kuang Kuo, Fang Ming Chen, Jih Yuan Chang, Bo Ting Liou

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Specific design of barrier in the AlGaN-based near ultraviolet (NUV) light-emitting diodes (LEDs) is investigated numerically. Simulation results reveal that NUV LEDs with the proposed p-Type/n-Type barrier can effectively reduce the polarization-induced electrostatic field, and thus enhance the spatial overlap of electron and hole wavefunctions in the wells.

Original languageEnglish
Title of host publication2016 International Semiconductor Laser Conference, ISLC 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784885523069
Publication statusPublished - 2016 Dec 2
Event2016 International Semiconductor Laser Conference, ISLC 2016 - Kobe, Japan
Duration: 2016 Sep 122016 Sep 15

Publication series

NameConference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)0899-9406

Other

Other2016 International Semiconductor Laser Conference, ISLC 2016
CountryJapan
CityKobe
Period16-09-1216-09-15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Influence of barrier structure on polarization effect in near ultraviolet light-emitting diodes'. Together they form a unique fingerprint.

Cite this