Abstract
Pentanary Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In 2S3 targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86×1016 cm-3 and 32 Ω cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe2, CuGaSe 2, and CuInS2. This may be because the vibration frequencies of InSe, InS bonds are similar to the GaSe and GaS bonds, causing their absorption bands overlap.
| Original language | English |
|---|---|
| Pages (from-to) | 824-830 |
| Number of pages | 7 |
| Journal | Physica B: Condensed Matter |
| Volume | 406 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2011 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Influence of annealing temperature on properties of Cu(In,Ga)(Se,S) 2 thin films prepared by co-sputtering from quaternary alloy and In2S3 targets. / Lin, Y. C.; Yen, W. T.; Chen, Y. L.; Wang, L. Q.; Jih, F. W.
In: Physica B: Condensed Matter, Vol. 406, No. 4, 01.02.2011, p. 824-830.Research output: Contribution to journal › Article
TY - JOUR
T1 - Influence of annealing temperature on properties of Cu(In,Ga)(Se,S) 2 thin films prepared by co-sputtering from quaternary alloy and In2S3 targets
AU - Lin, Y. C.
AU - Yen, W. T.
AU - Chen, Y. L.
AU - Wang, L. Q.
AU - Jih, F. W.
PY - 2011/2/1
Y1 - 2011/2/1
N2 - Pentanary Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In 2S3 targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86×1016 cm-3 and 32 Ω cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe2, CuGaSe 2, and CuInS2. This may be because the vibration frequencies of InSe, InS bonds are similar to the GaSe and GaS bonds, causing their absorption bands overlap.
AB - Pentanary Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In 2S3 targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86×1016 cm-3 and 32 Ω cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe2, CuGaSe 2, and CuInS2. This may be because the vibration frequencies of InSe, InS bonds are similar to the GaSe and GaS bonds, causing their absorption bands overlap.
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U2 - 10.1016/j.physb.2010.12.004
DO - 10.1016/j.physb.2010.12.004
M3 - Article
AN - SCOPUS:78751647878
VL - 406
SP - 824
EP - 830
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
IS - 4
ER -