Influence of annealing temperature on properties of Cu(In,Ga)(Se,S) 2 thin films prepared by co-sputtering from quaternary alloy and In2S3 targets

Y. C. Lin, W. T. Yen, Y. L. Chen, L. Q. Wang, F. W. Jih

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Pentanary Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In 2S3 targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86×1016 cm-3 and 32 Ω cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe2, CuGaSe 2, and CuInS2. This may be because the vibration frequencies of InSe, InS bonds are similar to the GaSe and GaS bonds, causing their absorption bands overlap.

Original languageEnglish
Pages (from-to)824-830
Number of pages7
JournalPhysica B: Condensed Matter
Volume406
Issue number4
DOIs
Publication statusPublished - 2011 Feb 1

Fingerprint

quaternary alloys
Sputtering
sputtering
Annealing
Thin films
annealing
Optical band gaps
calcium oxides
thin films
Lime
Spectrum analysis
Carrier concentration
spectrum analysis
Structural properties
Absorption spectra
absorbers
Electric properties
Optical properties
electrical properties
absorption spectra

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Influence of annealing temperature on properties of Cu(In,Ga)(Se,S) 2 thin films prepared by co-sputtering from quaternary alloy and In2S3 targets",
abstract = "Pentanary Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In 2S3 targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86×1016 cm-3 and 32 Ω cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe2, CuGaSe 2, and CuInS2. This may be because the vibration frequencies of InSe, InS bonds are similar to the GaSe and GaS bonds, causing their absorption bands overlap.",
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Influence of annealing temperature on properties of Cu(In,Ga)(Se,S) 2 thin films prepared by co-sputtering from quaternary alloy and In2S3 targets. / Lin, Y. C.; Yen, W. T.; Chen, Y. L.; Wang, L. Q.; Jih, F. W.

In: Physica B: Condensed Matter, Vol. 406, No. 4, 01.02.2011, p. 824-830.

Research output: Contribution to journalArticle

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AU - Chen, Y. L.

AU - Wang, L. Q.

AU - Jih, F. W.

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N2 - Pentanary Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In 2S3 targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86×1016 cm-3 and 32 Ω cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe2, CuGaSe 2, and CuInS2. This may be because the vibration frequencies of InSe, InS bonds are similar to the GaSe and GaS bonds, causing their absorption bands overlap.

AB - Pentanary Cu(In,Ga)(Se,S)2 (CIGSS) thin films were deposited on soda-lime glass substrate by co-sputtering quaternary alloy, and In 2S3 targets. In this study, we investigated the influence of post-annealing temperature on structural, compositional, electrical, and optical properties of CIGSS films. Our experimental results show that the CIGS quaternary target had chalcopyrite characteristics. All CIGSS films annealed above 733 K exhibited a polycrystalline tetragonal chalcopyrite structure, with (1 1 2) preferred orientation. The carrier concentration and resistivity of the resultant CIGSS layer annealed above 763 K was 4.86×1016 cm-3 and 32 Ω cm, respectively, and the optical band-gap of the CIGSS absorber layer was 1.18 eV. Raman spectral analysis demonstrated the existence of many different phases, including CuInSe2, CuGaSe 2, and CuInS2. This may be because the vibration frequencies of InSe, InS bonds are similar to the GaSe and GaS bonds, causing their absorption bands overlap.

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