Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment

The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.