Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment

Chia Lung Tsai, Yow-Jon Lin, Ping Hsun Wu, Shu You Chen, Day Shan Liu, Jia Huang Hong, Chia-Jyi Liu, Yu-Tai Shih, Jie Min Cheng, Hsing Cheng Chang

Research output: Contribution to journal › Article

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Abstract

The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.

Original languageEnglish
Article number113713
JournalJournal of Applied Physics
Volume101
Issue number11
DOIs
Publication statusPublished - 2007 Jun 22

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indium oxides
tin oxides
surface energy
organic semiconductors
energy
oxygen
electronics
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Tsai, Chia Lung ; Lin, Yow-Jon ; Wu, Ping Hsun ; Chen, Shu You ; Liu, Day Shan ; Hong, Jia Huang ; Liu, Chia-Jyi ; Shih, Yu-Tai ; Cheng, Jie Min ; Chang, Hsing Cheng. / Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment. In: Journal of Applied Physics. 2007 ; Vol. 101, No. 11.
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abstract = "The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.",
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Tsai, CL, Lin, Y-J, Wu, PH, Chen, SY, Liu, DS, Hong, JH, Liu, C-J, Shih, Y-T, Cheng, JM & Chang, HC 2007, 'Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment', Journal of Applied Physics, vol. 101, no. 11, 113713. https://doi.org/10.1063/1.2745366

Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment. / Tsai, Chia Lung; Lin, Yow-Jon; Wu, Ping Hsun; Chen, Shu You; Liu, Day Shan; Hong, Jia Huang; Liu, Chia-Jyi; Shih, Yu-Tai; Cheng, Jie Min; Chang, Hsing Cheng.

In: Journal of Applied Physics, Vol. 101, No. 11, 113713, 22.06.2007.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment

AU - Tsai, Chia Lung

AU - Lin, Yow-Jon

AU - Wu, Ping Hsun

AU - Chen, Shu You

AU - Liu, Day Shan

AU - Hong, Jia Huang

AU - Liu, Chia-Jyi

AU - Shih, Yu-Tai

AU - Cheng, Jie Min

AU - Chang, Hsing Cheng

PY - 2007/6/22

Y1 - 2007/6/22

N2 - The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.

AB - The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.

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Tsai CL, Lin Y-J, Wu PH, Chen SY, Liu DS, Hong JH et al. Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment. Journal of Applied Physics. 2007 Jun 22;101(11). 113713. https://doi.org/10.1063/1.2745366

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