Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment

Chia Lung Tsai, Yow-Jon Lin, Ping Hsun Wu, Shu You Chen, Day Shan Liu, Jia Huang Hong, Chia-Jyi Liu, Yu-Tai Shih, Jie Min Cheng, Hsing Cheng Chang

Research output: Contribution to journalArticle

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Abstract

The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.

Original languageEnglish
Article number113713
JournalJournal of Applied Physics
Volume101
Issue number11
DOIs
Publication statusPublished - 2007 Jun 22

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indium oxides
tin oxides
surface energy
organic semiconductors
energy
oxygen
electronics
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Tsai, Chia Lung ; Lin, Yow-Jon ; Wu, Ping Hsun ; Chen, Shu You ; Liu, Day Shan ; Hong, Jia Huang ; Liu, Chia-Jyi ; Shih, Yu-Tai ; Cheng, Jie Min ; Chang, Hsing Cheng. / Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment. In: Journal of Applied Physics. 2007 ; Vol. 101, No. 11.
@article{425f9d6505114eaebf1ecb4c272ae2a2,
title = "Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment",
abstract = "The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.",
author = "Tsai, {Chia Lung} and Yow-Jon Lin and Wu, {Ping Hsun} and Chen, {Shu You} and Liu, {Day Shan} and Hong, {Jia Huang} and Chia-Jyi Liu and Yu-Tai Shih and Cheng, {Jie Min} and Chang, {Hsing Cheng}",
year = "2007",
month = "6",
day = "22",
doi = "10.1063/1.2745366",
language = "English",
volume = "101",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment. / Tsai, Chia Lung; Lin, Yow-Jon; Wu, Ping Hsun; Chen, Shu You; Liu, Day Shan; Hong, Jia Huang; Liu, Chia-Jyi; Shih, Yu-Tai; Cheng, Jie Min; Chang, Hsing Cheng.

In: Journal of Applied Physics, Vol. 101, No. 11, 113713, 22.06.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment

AU - Tsai, Chia Lung

AU - Lin, Yow-Jon

AU - Wu, Ping Hsun

AU - Chen, Shu You

AU - Liu, Day Shan

AU - Hong, Jia Huang

AU - Liu, Chia-Jyi

AU - Shih, Yu-Tai

AU - Cheng, Jie Min

AU - Chang, Hsing Cheng

PY - 2007/6/22

Y1 - 2007/6/22

N2 - The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.

AB - The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.

UR - http://www.scopus.com/inward/record.url?scp=34250686695&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34250686695&partnerID=8YFLogxK

U2 - 10.1063/1.2745366

DO - 10.1063/1.2745366

M3 - Article

AN - SCOPUS:34250686695

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113713

ER -