Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment

Chia Lung Tsai; Yow Jon Lin; Ping Hsun Wu; Shu You Chen; Day Shan Liu; Jia Huang Hong; Chia Jyi Liu; Yu Tai Shih; Jie Min Cheng; Hsing Cheng Chang

doi:10.1063/1.2745366

Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment

Chia Lung Tsai, Yow Jon Lin, Ping Hsun Wu, Shu You Chen, Day Shan Liu, Jia Huang Hong, Chia Jyi Liu, Yu Tai Shih, Jie Min Cheng, Hsing Cheng Chang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.

Original language	English
Article number	113713
Journal	Journal of Applied Physics
Volume	101
Issue number	11
DOIs	https://doi.org/10.1063/1.2745366
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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@article{425f9d6505114eaebf1ecb4c272ae2a2,

title = "Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment",

abstract = "The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.",

author = "Tsai, {Chia Lung} and Lin, {Yow Jon} and Wu, {Ping Hsun} and Chen, {Shu You} and Liu, {Day Shan} and Hong, {Jia Huang} and Liu, {Chia Jyi} and Shih, {Yu Tai} and Cheng, {Jie Min} and Chang, {Hsing Cheng}",

note = "Funding Information: The authors acknowledge support in the form of grants from the National Science Council of Taiwan, Republic of China. ",

year = "2007",

doi = "10.1063/1.2745366",

language = "English",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment. / Tsai, Chia Lung; Lin, Yow Jon; Wu, Ping Hsun; Chen, Shu You; Liu, Day Shan; Hong, Jia Huang; Liu, Chia Jyi ; Shih, Yu Tai; Cheng, Jie Min; Chang, Hsing Cheng.

In: Journal of Applied Physics, Vol. 101, No. 11, 113713, 2007.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment

AU - Tsai, Chia Lung

AU - Lin, Yow Jon

AU - Wu, Ping Hsun

AU - Chen, Shu You

AU - Liu, Day Shan

AU - Hong, Jia Huang

AU - Liu, Chia Jyi

AU - Shih, Yu Tai

AU - Cheng, Jie Min

AU - Chang, Hsing Cheng

N1 - Funding Information: The authors acknowledge support in the form of grants from the National Science Council of Taiwan, Republic of China.

PY - 2007

Y1 - 2007

N2 - The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.

AB - The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.

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