Abstract
The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.
Original language | English |
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Article number | 113713 |
Journal | Journal of Applied Physics |
Volume | 101 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2007 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)