Induced increase in surface work function and surface energy of indium tin oxide-doped ZnO films by (N H4) 2 Sx treatment

Chia Lung Tsai, Yow Jon Lin, Ping Hsun Wu, Shu You Chen, Day Shan Liu, Jia Huang Hong, Chia Jyi Liu, Yu Tai Shih, Jie Min Cheng, Hsing Cheng Chang

Research output: Contribution to journalArticle

4 Citations (Scopus)


The effects of (N H4) 2 Sx treatment on the surface electronic properties of the thin indium tin oxide (ITO)-doped ZnO films have been examined in this study. According to the experimental results, we found that the formation of S-metal bonds and the removal of oxygen vacancies near the (N H4) 2 Sx -treated ITO-doped ZnO surface could lead to an increase in the surface energy and the work function, meaning that (N H4) 2 Sx treatment might be more helpful to form the uniform deposition of the organic semiconductor on ITO-doped ZnO surfaces and improve the efficiency of ZnO-based organic devices.

Original languageEnglish
Article number113713
JournalJournal of Applied Physics
Issue number11
Publication statusPublished - 2007 Jun 22


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this