Induced changes in surface band bending of n -type and p -type AlGaN by oxidation and wet chemical treatments

Yow-Jon Lin, Yow Lin Chu, Wen Xiang Lin, Feng Tso Chien, Chi Sen Lee

Research output: Contribution to journalArticle

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Abstract

The surface chemistry and electrical properties of p -type and n -type AlGaN surfaces were studied via x-ray photoelectron spectroscopy before and after oxidation and wet chemical treatments. Shifts in the surface Fermi level were measured with the change in onset of the valence-band spectra. Oxidation and HF and (N H4) 2 Sx treatments on p -type AlGaN (n -type AlGaN) led to an increase (the reduction) in the surface band bending due to more N vacancies and N vacancies being occupied by S (i.e., donorlike states) than Al vacancies and Ga vacancies (i.e., acceptorlike states) near the p -type AlGaN (n -type AlGaN) surface region. The changes in surface chemistry indicate that oxidation and wet chemical treatments alter the surface state density through the formation of more donorlike states.

Original languageEnglish
Article number073702
JournalJournal of Applied Physics
Volume99
Issue number7
DOIs
Publication statusPublished - 2006 Apr 1

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oxidation
chemistry
x ray spectroscopy
Fermi surfaces
electrical properties
photoelectron spectroscopy
valence
shift

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lin, Yow-Jon ; Chu, Yow Lin ; Lin, Wen Xiang ; Chien, Feng Tso ; Lee, Chi Sen. / Induced changes in surface band bending of n -type and p -type AlGaN by oxidation and wet chemical treatments. In: Journal of Applied Physics. 2006 ; Vol. 99, No. 7.
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abstract = "The surface chemistry and electrical properties of p -type and n -type AlGaN surfaces were studied via x-ray photoelectron spectroscopy before and after oxidation and wet chemical treatments. Shifts in the surface Fermi level were measured with the change in onset of the valence-band spectra. Oxidation and HF and (N H4) 2 Sx treatments on p -type AlGaN (n -type AlGaN) led to an increase (the reduction) in the surface band bending due to more N vacancies and N vacancies being occupied by S (i.e., donorlike states) than Al vacancies and Ga vacancies (i.e., acceptorlike states) near the p -type AlGaN (n -type AlGaN) surface region. The changes in surface chemistry indicate that oxidation and wet chemical treatments alter the surface state density through the formation of more donorlike states.",
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Induced changes in surface band bending of n -type and p -type AlGaN by oxidation and wet chemical treatments. / Lin, Yow-Jon; Chu, Yow Lin; Lin, Wen Xiang; Chien, Feng Tso; Lee, Chi Sen.

In: Journal of Applied Physics, Vol. 99, No. 7, 073702, 01.04.2006.

Research output: Contribution to journalArticle

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AU - Lin, Yow-Jon

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AU - Lee, Chi Sen

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AB - The surface chemistry and electrical properties of p -type and n -type AlGaN surfaces were studied via x-ray photoelectron spectroscopy before and after oxidation and wet chemical treatments. Shifts in the surface Fermi level were measured with the change in onset of the valence-band spectra. Oxidation and HF and (N H4) 2 Sx treatments on p -type AlGaN (n -type AlGaN) led to an increase (the reduction) in the surface band bending due to more N vacancies and N vacancies being occupied by S (i.e., donorlike states) than Al vacancies and Ga vacancies (i.e., acceptorlike states) near the p -type AlGaN (n -type AlGaN) surface region. The changes in surface chemistry indicate that oxidation and wet chemical treatments alter the surface state density through the formation of more donorlike states.

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