Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation

Yow Jon Lin; Chou Wei Hsu; Yao Ming Chen; Yung Chi Wang

Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation

Yow Jon Lin, Chou Wei Hsu, Yao Ming Chen, Yung Chi Wang

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this study, the increase mechanism of the indium-tin-oxide (ITO) work function (φ_w) by KrF excimer laser irradiation was investigated. From the observed x-ray photoelectron spectroscopy (XPS) results and four-point probe measurements, it is suggested that the surface chemical changes and the laser irradiation time had strong effects on the φ_w of ITO. Incorporation of oxygen atoms near the ITO surface during laser irradiation induced a peroxidic ITO surface, increasing φ_w. The induced increase of the ITO φ_w by laser irradiation could be useful for the enhancement of the hole injection in organic light emitting diodes.

Original language	English
Pages (from-to)	L9-L11
Journal	Journal of Electronic Materials
Volume	34
Issue number	3
Publication status	Published - 2005 Mar 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation",

abstract = "In this study, the increase mechanism of the indium-tin-oxide (ITO) work function (φw) by KrF excimer laser irradiation was investigated. From the observed x-ray photoelectron spectroscopy (XPS) results and four-point probe measurements, it is suggested that the surface chemical changes and the laser irradiation time had strong effects on the φw of ITO. Incorporation of oxygen atoms near the ITO surface during laser irradiation induced a peroxidic ITO surface, increasing φw. The induced increase of the ITO φw by laser irradiation could be useful for the enhancement of the hole injection in organic light emitting diodes.",

author = "Lin, {Yow Jon} and Hsu, {Chou Wei} and Chen, {Yao Ming} and Wang, {Yung Chi}",

year = "2005",

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T1 - Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation

AU - Lin, Yow Jon

AU - Hsu, Chou Wei

AU - Chen, Yao Ming

AU - Wang, Yung Chi

PY - 2005/3/1

Y1 - 2005/3/1

N2 - In this study, the increase mechanism of the indium-tin-oxide (ITO) work function (φw) by KrF excimer laser irradiation was investigated. From the observed x-ray photoelectron spectroscopy (XPS) results and four-point probe measurements, it is suggested that the surface chemical changes and the laser irradiation time had strong effects on the φw of ITO. Incorporation of oxygen atoms near the ITO surface during laser irradiation induced a peroxidic ITO surface, increasing φw. The induced increase of the ITO φw by laser irradiation could be useful for the enhancement of the hole injection in organic light emitting diodes.

AB - In this study, the increase mechanism of the indium-tin-oxide (ITO) work function (φw) by KrF excimer laser irradiation was investigated. From the observed x-ray photoelectron spectroscopy (XPS) results and four-point probe measurements, it is suggested that the surface chemical changes and the laser irradiation time had strong effects on the φw of ITO. Incorporation of oxygen atoms near the ITO surface during laser irradiation induced a peroxidic ITO surface, increasing φw. The induced increase of the ITO φw by laser irradiation could be useful for the enhancement of the hole injection in organic light emitting diodes.

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JO - Journal of Electronic Materials

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