Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation

Yow Jon Lin, Chou Wei Hsu, Yao Ming Chen, Yung Chi Wang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

In this study, the increase mechanism of the indium-tin-oxide (ITO) work function (φw) by KrF excimer laser irradiation was investigated. From the observed x-ray photoelectron spectroscopy (XPS) results and four-point probe measurements, it is suggested that the surface chemical changes and the laser irradiation time had strong effects on the φw of ITO. Incorporation of oxygen atoms near the ITO surface during laser irradiation induced a peroxidic ITO surface, increasing φw. The induced increase of the ITO φw by laser irradiation could be useful for the enhancement of the hole injection in organic light emitting diodes.

Original languageEnglish
Pages (from-to)L9-L11
JournalJournal of Electronic Materials
Volume34
Issue number3
Publication statusPublished - 2005 Mar 1

Fingerprint

Excimer lasers
Laser beam effects
Tin oxides
excimer lasers
indium oxides
Indium
tin oxides
irradiation
lasers
Organic light emitting diodes (OLED)
Photoelectron spectroscopy
x ray spectroscopy
oxygen atoms
light emitting diodes
indium tin oxide
photoelectron spectroscopy
injection
Oxygen
X rays
Atoms

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lin, Yow Jon ; Hsu, Chou Wei ; Chen, Yao Ming ; Wang, Yung Chi. / Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation. In: Journal of Electronic Materials. 2005 ; Vol. 34, No. 3. pp. L9-L11.
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Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation. / Lin, Yow Jon; Hsu, Chou Wei; Chen, Yao Ming; Wang, Yung Chi.

In: Journal of Electronic Materials, Vol. 34, No. 3, 01.03.2005, p. L9-L11.

Research output: Contribution to journalArticle

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