Incorporation of MoS2 nanoflakes into poly(3-hexylthiophene)/n-type Si devices to improve the rectification behavior and optoelectronic performance

Chang Lin Wu, Yow-Jon Lin

Research output: Contribution to journalArticle

Abstract

This study determines the effect of incorporating MoS2 nanoflakes into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms using the rectification current–voltage characteristics of P3HT/n-type Si devices. It is shown that the forward-voltage current for P3HT/n-type Si devices is limited by the combined effect of thermionic emission and space-charge-limited current conduction. However, carrier transport for P3HT:MoS2/n-type Si devices in the forward-voltage region is almost dominated by thermionic emission. Incorporation of MoS2 nanoflakes into P3HT modifies the P3HT-Si interface and the values for the carrier mobility in the P3HT layer and the external quantum efficiency of the P3HT/n-type Si devices are significantly increased, which improves the rectification and optoelectronic performance of P3HT:MoS2/n-type Si devices.

Original languageEnglish
Pages (from-to)1533-1539
Number of pages7
JournalIndian Journal of Physics
Volume92
Issue number12
DOIs
Publication statusPublished - 2018 Dec 1

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rectification
thermionic emission
conduction
electric potential
carrier mobility
quantum efficiency
space charge

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Incorporation of MoS2 nanoflakes into poly(3-hexylthiophene)/n-type Si devices to improve the rectification behavior and optoelectronic performance",
abstract = "This study determines the effect of incorporating MoS2 nanoflakes into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms using the rectification current–voltage characteristics of P3HT/n-type Si devices. It is shown that the forward-voltage current for P3HT/n-type Si devices is limited by the combined effect of thermionic emission and space-charge-limited current conduction. However, carrier transport for P3HT:MoS2/n-type Si devices in the forward-voltage region is almost dominated by thermionic emission. Incorporation of MoS2 nanoflakes into P3HT modifies the P3HT-Si interface and the values for the carrier mobility in the P3HT layer and the external quantum efficiency of the P3HT/n-type Si devices are significantly increased, which improves the rectification and optoelectronic performance of P3HT:MoS2/n-type Si devices.",
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N2 - This study determines the effect of incorporating MoS2 nanoflakes into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms using the rectification current–voltage characteristics of P3HT/n-type Si devices. It is shown that the forward-voltage current for P3HT/n-type Si devices is limited by the combined effect of thermionic emission and space-charge-limited current conduction. However, carrier transport for P3HT:MoS2/n-type Si devices in the forward-voltage region is almost dominated by thermionic emission. Incorporation of MoS2 nanoflakes into P3HT modifies the P3HT-Si interface and the values for the carrier mobility in the P3HT layer and the external quantum efficiency of the P3HT/n-type Si devices are significantly increased, which improves the rectification and optoelectronic performance of P3HT:MoS2/n-type Si devices.

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