Incorporation of black phosphorus into poly(3-hexylthiophene)/n-type Si devices resulting improvement in rectifying and optoelectronic performances

Hong Zhi Lin, Yow Jon Lin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices.

Original languageEnglish
Pages (from-to)538-542
Number of pages5
JournalSynthetic Metals
Volume220
DOIs
Publication statusPublished - 2016 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Incorporation of black phosphorus into poly(3-hexylthiophene)/n-type Si devices resulting improvement in rectifying and optoelectronic performances'. Together they form a unique fingerprint.

  • Cite this