Incorporation of black phosphorus into poly(3-hexylthiophene)/n-type Si devices resulting improvement in rectifying and optoelectronic performances

Hong Zhi Lin, Yow-Jon Lin

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices.

Original languageEnglish
Pages (from-to)538-542
Number of pages5
JournalSynthetic Metals
Volume220
DOIs
Publication statusPublished - 2016 Oct 1

Fingerprint

Optoelectronic devices
Phosphorus
phosphorus
Thermionic emission
Hole mobility
Current voltage characteristics
Electric space charge
thermionic emission
hole mobility
electric potential
space charge
Electric potential
conduction
poly(3-hexylthiophene)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices.",
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N2 - The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices.

AB - The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene) (P3HT) on the electrical conduction mechanisms in the rectifying current-voltage characteristics of P3HT/n-type Si devices was investigated. It is shown that the rectifying behavior is affected by the bulk effects of the P3HT layer and the forward-voltage current is limited by thermionic emission and space charge limited current mechanisms. The incorporation of BP into P3HT leads to a combined effect of a significant increase in the hole mobility and the interfacial modification of P3HT/n-type Si, resulting improvement in the rectifying and optoelectronic performances of P3HT/n-type Si devices.

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