Incorporation of black phosphorus into P3HT: PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances

Yow Jon Lin; Hong Zhi Lin; Nian Hao Yan; Zhi Hui Tang; Hsing Cheng Chang

doi:10.1007/s00339-016-0490-0

Incorporation of black phosphorus into P3HT: PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances

Yow Jon Lin, Hong Zhi Lin, Nian Hao Yan, Zhi Hui Tang, Hsing Cheng Chang

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.

Original language	English
Article number	974
Journal	Applied Physics A: Materials Science and Processing
Volume	122
Issue number	11
DOIs	https://doi.org/10.1007/s00339-016-0490-0
Publication status	Published - 2016 Nov 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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title = "Incorporation of black phosphorus into P3HT: PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances",

abstract = "The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.",

author = "Lin, {Yow Jon} and Lin, {Hong Zhi} and Yan, {Nian Hao} and Tang, {Zhi Hui} and Chang, {Hsing Cheng}",

year = "2016",

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doi = "10.1007/s00339-016-0490-0",

language = "English",

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journal = "Applied Physics",

issn = "0340-3793",

publisher = "Springer Heidelberg",

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Incorporation of black phosphorus into P3HT : PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances. / Lin, Yow Jon; Lin, Hong Zhi; Yan, Nian Hao; Tang, Zhi Hui; Chang, Hsing Cheng.

In: Applied Physics A: Materials Science and Processing, Vol. 122, No. 11, 974, 01.11.2016.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Incorporation of black phosphorus into P3HT

T2 - PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances

AU - Lin, Yow Jon

AU - Lin, Hong Zhi

AU - Yan, Nian Hao

AU - Tang, Zhi Hui

AU - Chang, Hsing Cheng

PY - 2016/11/1

Y1 - 2016/11/1

N2 - The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.

AB - The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.

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