Incorporation of black phosphorus into P3HT: PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances

Yow Jon Lin, Hong Zhi Lin, Nian Hao Yan, Zhi Hui Tang, Hsing Cheng Chang

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The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.

Original languageEnglish
Article number974
JournalApplied Physics A: Materials Science and Processing
Issue number11
Publication statusPublished - 2016 Nov 1


All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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