Incorporation of black phosphorus into P3HT

PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances

Yow Jon Lin, Hong Zhi Lin, Nian Hao Yan, Zhi Hui Tang, Hsing Cheng Chang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.

Original languageEnglish
Article number974
JournalApplied Physics A: Materials Science and Processing
Volume122
Issue number11
DOIs
Publication statusPublished - 2016 Nov 1

Fingerprint

Butyric acid
Optoelectronic devices
Phosphorus
Esters
Thermionic emission
Conversion efficiency
Surface roughness
poly(3-hexylthiophene)
(6,6)-phenyl C61-butyric acid methyl ester
Electric potential

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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title = "Incorporation of black phosphorus into P3HT: PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances",
abstract = "The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.",
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Incorporation of black phosphorus into P3HT : PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances. / Lin, Yow Jon; Lin, Hong Zhi; Yan, Nian Hao; Tang, Zhi Hui; Chang, Hsing Cheng.

In: Applied Physics A: Materials Science and Processing, Vol. 122, No. 11, 974, 01.11.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Incorporation of black phosphorus into P3HT

T2 - PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances

AU - Lin, Yow Jon

AU - Lin, Hong Zhi

AU - Yan, Nian Hao

AU - Tang, Zhi Hui

AU - Chang, Hsing Cheng

PY - 2016/11/1

Y1 - 2016/11/1

N2 - The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.

AB - The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.

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