Abstract
The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.
| Original language | English |
|---|---|
| Article number | 974 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 122 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2016 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Incorporation of black phosphorus into P3HT : PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances. / Lin, Yow Jon; Lin, Hong Zhi; Yan, Nian Hao; Tang, Zhi Hui; Chang, Hsing Cheng.
In: Applied Physics A: Materials Science and Processing, Vol. 122, No. 11, 974, 01.11.2016.Research output: Contribution to journal › Article
TY - JOUR
T1 - Incorporation of black phosphorus into P3HT
T2 - PCBM/n-type Si devices resulting in improvement in electrical and optoelectronic performances
AU - Lin, Yow Jon
AU - Lin, Hong Zhi
AU - Yan, Nian Hao
AU - Tang, Zhi Hui
AU - Chang, Hsing Cheng
PY - 2016/11/1
Y1 - 2016/11/1
N2 - The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.
AB - The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.
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UR - http://www.scopus.com/inward/citedby.url?scp=84992128665&partnerID=8YFLogxK
U2 - 10.1007/s00339-016-0490-0
DO - 10.1007/s00339-016-0490-0
M3 - Article
AN - SCOPUS:84992128665
VL - 122
JO - Applied Physics
JF - Applied Physics
SN - 0340-3793
IS - 11
M1 - 974
ER -