Abstract
The effect of the incorporation of black phosphorus (BP) into poly(3-hexylthiophene):[6,6]-phenyl-C61-butyric acid methyl ester (P3HT:PCBM) on the electrical conduction mechanisms in the rectifying current–voltage characteristics of P3HT:PCBM/n-type Si devices was investigated. It is found that the forward-voltage currents are limited by thermionic emission mechanism. The incorporation of BP into P3HT:PCBM leads to a combined effect of a reduction in resistivity and an increase in the surface roughness, resulting in improvement in the electrical and optoelectronic performances of P3HT:PCBM/n-type Si devices. The findings show that high responsivity originates from the external light injection efficiency, internal power conversion efficiency, and carrier collection.
Original language | English |
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Article number | 974 |
Journal | Applied Physics A: Materials Science and Processing |
Volume | 122 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2016 Nov 1 |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)