InAs/GaAs short-period strained-layer superlattices grown on GaAs as spatial light modulators: Uniformity measurements

Man Fang Huang, Elsa Garmire, Tom Hasenberg, Steffen Koehler

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Optical properties of two-dimensional transmission-type spatial light modulators using InAs/ GaAs short-period strained-layer superlattices (SPSLSs) in quantum wells, which operate near 960 nm, are investigated. The absorption characteristics of the individual pixels across a ∼ 200 pixellated wafer, i.e. the uniformity of the devices, are analyzed. The limits to performance of this spatial light modulator due to nonuniformity are also discussed.

Original languageEnglish
Pages (from-to)165-176
Number of pages12
JournalSuperlattices and Microstructures
Issue number2
Publication statusPublished - 1997 Mar


All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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