In As/GaAs short-period strained-layer superlattices grown on GaAs as spatial light modulators: uniformity measurements

Man-Fang Huang, T. Hasenberg, Steffen Koehler

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Optical properties of two-dimensional transmission-type spatial light modulators using InAs/GaAs short-period strained-layer superlattices (SPSLSs) in quantum wells, which operate near 960 nm, are investigated. The absorption characteristics of the individual pixels across a ≈200 pixellated wafer, i.e. the uniformity of the devices, are analyzed. The limits to performance of this spatial light modulator due to nonuniformity are also discussed.

Original languageEnglish
Pages (from-to)165-176
Number of pages12
JournalSuperlattices and Microstructures
Volume21
Issue number2
DOIs
Publication statusPublished - 1997 Jan 1

Fingerprint

Superlattices
light modulators
superlattices
nonuniformity
Semiconductor quantum wells
Optical properties
Pixels
pixels
quantum wells
wafers
optical properties
Spatial light modulators
gallium arsenide
indium arsenide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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In As/GaAs short-period strained-layer superlattices grown on GaAs as spatial light modulators : uniformity measurements. / Huang, Man-Fang; Hasenberg, T.; Koehler, Steffen.

In: Superlattices and Microstructures, Vol. 21, No. 2, 01.01.1997, p. 165-176.

Research output: Contribution to journalArticle

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