We report an improving simultaneous of crystallization and Ga homogenization method of Cu(In,Ga)Se2(CIGS) layer by evaporated In film in cell structure of glass/Mo/Cu-In-Ga/CdS/i-ZnO/AZO/Al. Results demonstrate that the evaporated In structure is superior to conventional sputtered In structure for its ability to produce a CIGS film with better crystallization, superior structural characteristics, reduced surface roughness, and more homogeneous distribution of elemental Ga. The device conversion efficiency using the evaporated In structure was found to increase by about 29% from 6.0% to 8.5% beyond what is possible using conventional sputtering In structure.
All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry