Improving simultaneous of crystallization and Ga homogenization in Cu(In,Ga)Se2 film using an evaporated in film

Yi Cheng Lin, Xu Jing Yao, Li Ching Wang, Jyh Ming Ting

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report an improving simultaneous of crystallization and Ga homogenization method of Cu(In,Ga)Se2(CIGS) layer by evaporated In film in cell structure of glass/Mo/Cu-In-Ga/CdS/i-ZnO/AZO/Al. Results demonstrate that the evaporated In structure is superior to conventional sputtered In structure for its ability to produce a CIGS film with better crystallization, superior structural characteristics, reduced surface roughness, and more homogeneous distribution of elemental Ga. The device conversion efficiency using the evaporated In structure was found to increase by about 29% from 6.0% to 8.5% beyond what is possible using conventional sputtering In structure.

Original languageEnglish
Pages (from-to)31-36
Number of pages6
JournalJournal of Alloys and Compounds
Volume572
DOIs
Publication statusPublished - 2013 Sep 25

Fingerprint

Crystallization
Homogenization method
Conversion efficiency
Sputtering
Surface roughness
Glass

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "Improving simultaneous of crystallization and Ga homogenization in Cu(In,Ga)Se2 film using an evaporated in film",
abstract = "We report an improving simultaneous of crystallization and Ga homogenization method of Cu(In,Ga)Se2(CIGS) layer by evaporated In film in cell structure of glass/Mo/Cu-In-Ga/CdS/i-ZnO/AZO/Al. Results demonstrate that the evaporated In structure is superior to conventional sputtered In structure for its ability to produce a CIGS film with better crystallization, superior structural characteristics, reduced surface roughness, and more homogeneous distribution of elemental Ga. The device conversion efficiency using the evaporated In structure was found to increase by about 29{\%} from 6.0{\%} to 8.5{\%} beyond what is possible using conventional sputtering In structure.",
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year = "2013",
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Improving simultaneous of crystallization and Ga homogenization in Cu(In,Ga)Se2 film using an evaporated in film. / Lin, Yi Cheng; Yao, Xu Jing; Wang, Li Ching; Ting, Jyh Ming.

In: Journal of Alloys and Compounds, Vol. 572, 25.09.2013, p. 31-36.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improving simultaneous of crystallization and Ga homogenization in Cu(In,Ga)Se2 film using an evaporated in film

AU - Lin, Yi Cheng

AU - Yao, Xu Jing

AU - Wang, Li Ching

AU - Ting, Jyh Ming

PY - 2013/9/25

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N2 - We report an improving simultaneous of crystallization and Ga homogenization method of Cu(In,Ga)Se2(CIGS) layer by evaporated In film in cell structure of glass/Mo/Cu-In-Ga/CdS/i-ZnO/AZO/Al. Results demonstrate that the evaporated In structure is superior to conventional sputtered In structure for its ability to produce a CIGS film with better crystallization, superior structural characteristics, reduced surface roughness, and more homogeneous distribution of elemental Ga. The device conversion efficiency using the evaporated In structure was found to increase by about 29% from 6.0% to 8.5% beyond what is possible using conventional sputtering In structure.

AB - We report an improving simultaneous of crystallization and Ga homogenization method of Cu(In,Ga)Se2(CIGS) layer by evaporated In film in cell structure of glass/Mo/Cu-In-Ga/CdS/i-ZnO/AZO/Al. Results demonstrate that the evaporated In structure is superior to conventional sputtered In structure for its ability to produce a CIGS film with better crystallization, superior structural characteristics, reduced surface roughness, and more homogeneous distribution of elemental Ga. The device conversion efficiency using the evaporated In structure was found to increase by about 29% from 6.0% to 8.5% beyond what is possible using conventional sputtering In structure.

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