Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers

Yi An Chang; Hao Chung Kuo; Chun Yi Lu; Yen Kuang Kuo; Shing Chung Wang

doi:10.1088/0268-1242/20/6/020

Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers

Yi An Chang, Hao Chung Kuo, Chun Yi Lu, Yen Kuang Kuo, Shing Chung Wang

Department of Physics

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2 Citations (Scopus)

Abstract

Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs _0.9P_0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T₀) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm² ridge waveguide uncoated laser diode. The T₀ value of the conventional structure without the high-bandgap GaAs_0.9P_0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.

Original language	English
Pages (from-to)	601-605
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	20
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/20/6/020
Publication status	Published - 2005 Jun 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

Chang, Y. A., Kuo, H. C., Lu, C. Y., Kuo, Y. K., & Wang, S. C. (2005). Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers. Semiconductor Science and Technology, 20(6), 601-605. https://doi.org/10.1088/0268-1242/20/6/020

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abstract = "Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs 0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.",

author = "Chang, {Yi An} and Kuo, {Hao Chung} and Lu, {Chun Yi} and Kuo, {Yen Kuang} and Wang, {Shing Chung}",

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T1 - Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers

AU - Chang, Yi An

AU - Kuo, Hao Chung

AU - Lu, Chun Yi

AU - Kuo, Yen Kuang

AU - Wang, Shing Chung

PY - 2005/6/1

Y1 - 2005/6/1

N2 - Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs 0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.

AB - Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs 0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.

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10.1088/0268-1242/20/6/020