Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers

Yi An Chang; Hao Chung Kuo; Chun Yi Lu; Yen Kuang Kuo; Shing Chung Wang

doi:10.1088/0268-1242/20/6/020

Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers

Yi An Chang, Hao Chung Kuo, Chun Yi Lu, Yen Kuang Kuo, Shing Chung Wang

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs _0.9P_0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T₀) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm² ridge waveguide uncoated laser diode. The T₀ value of the conventional structure without the high-bandgap GaAs_0.9P_0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.

Original language	English
Pages (from-to)	601-605
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	20
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/20/6/020
Publication status	Published - 2005 Jun 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers",

abstract = "Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs 0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.",

author = "Chang, {Yi An} and Kuo, {Hao Chung} and Lu, {Chun Yi} and Kuo, {Yen Kuang} and Wang, {Shing Chung}",

year = "2005",

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doi = "10.1088/0268-1242/20/6/020",

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T1 - Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers

AU - Chang, Yi An

AU - Kuo, Hao Chung

AU - Lu, Chun Yi

AU - Kuo, Yen Kuang

AU - Wang, Shing Chung

PY - 2005/6/1

Y1 - 2005/6/1

N2 - Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs 0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.

AB - Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs 0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.

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