Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers

Yi An Chang, Hao Chung Kuo, Chun Yi Lu, Yen Kuang Kuo, Shing Chung Wang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs 0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.

Original languageEnglish
Pages (from-to)601-605
Number of pages5
JournalSemiconductor Science and Technology
Volume20
Issue number6
DOIs
Publication statusPublished - 2005 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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