Abstract
Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs 0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.
| Original language | English |
|---|---|
| Pages (from-to) | 601-605 |
| Number of pages | 5 |
| Journal | Semiconductor Science and Technology |
| Volume | 20 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2005 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
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Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers. / Chang, Yi An; Kuo, Hao Chung; Lu, Chun Yi; Kuo, Yen Kuang; Wang, Shing Chung.
In: Semiconductor Science and Technology, Vol. 20, No. 6, 01.06.2005, p. 601-605.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improving high-temperature performance in continuous-wave mode InGaAsN/GaAsN ridge waveguide lasers
AU - Chang, Yi An
AU - Kuo, Hao Chung
AU - Lu, Chun Yi
AU - Kuo, Yen Kuang
AU - Wang, Shing Chung
PY - 2005/6/1
Y1 - 2005/6/1
N2 - Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs 0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.
AB - Continuous-wave (CW) mode operation InGaAsN/GaAsN double-quantum-well lasers with a laser wavelength of 1.295 νm are demonstrated by metal-organic chemical vapour deposition (MOCVD). With the use of a high-bandgap GaAs 0.9P0.1 into the active region before the growth of p-type layers, a room temperature (RT) threshold current of 99 mA and the characteristic temperature (T0) values of 155 K in a temperature range of 25-95 °C and 179 K in a temperature range of 25-85 °C are obtained from a 4 × 1000 νm2 ridge waveguide uncoated laser diode. The T0 value of the conventional structure without the high-bandgap GaAs0.9P0.1 is 118 K in a temperature range of 25-95 °C. High-temperature performance is improved and the results of numerical analysis suggest that it may be attributed to the reduced electronic leakage current.
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U2 - 10.1088/0268-1242/20/6/020
DO - 10.1088/0268-1242/20/6/020
M3 - Article
AN - SCOPUS:18744362446
VL - 20
SP - 601
EP - 605
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 6
ER -