Abstract
In this work, we proposed a novel CuGa-NaF (CuGa:Na) target route to improve Ga distribution and device efficiency of flexible Cu(In,Ga)(S,Se) (CIGSSe) solar cells. Analysis involved characterizing the basic material properties of two absorber layers fabricated using sputtering targets of CuGa:Na or Mo: Na. We assessed the uniformity of Ga and Na distribution in the absorber layers. We also examined the effects of various sputtering parameters and sought to optimize the Na content. Finally, we compared the conversion efficiency of the solar cells fabricated using the two Na addition routes (targets of CuGa:Na or Mo:Na target) with the following structure: metal foil/Cr/Mo/CIGSSe/CdS/i-ZnO/ITO/Al. Experimental results show that the CuGa:Na target improved the Ga distribution on the surface of the CIGSSe absorber compared to the Mo:Na target. When applied at a CuGa:Na/In thickness ratio of 300 nm/300 nm, the conversion efficiency of the two devices was as follows: CIGSSe solar cell with Mo: Na-derived absorber layer (7.5%) and CIGSSe solar cell with CuGa: Na-derived absorber layer (9.81%).
| Original language | English |
|---|---|
| Pages (from-to) | 151-155 |
| Number of pages | 5 |
| Journal | Materials Science in Semiconductor Processing |
| Volume | 94 |
| DOIs | |
| Publication status | Published - 2019 May 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Improving Ga distribution and efficiency of flexible Cu(In,Ga)(S,Se) solar cell using CuGa:Na target route. / Lin, Yi-Cheng or Y. C.; Liu, Kuan Ting; Hsieh, Tung Po; Hsu, Hung Ru.
In: Materials Science in Semiconductor Processing, Vol. 94, 01.05.2019, p. 151-155.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improving Ga distribution and efficiency of flexible Cu(In,Ga)(S,Se) solar cell using CuGa:Na target route
AU - Lin, Yi-Cheng or Y. C.
AU - Liu, Kuan Ting
AU - Hsieh, Tung Po
AU - Hsu, Hung Ru
PY - 2019/5/1
Y1 - 2019/5/1
N2 - In this work, we proposed a novel CuGa-NaF (CuGa:Na) target route to improve Ga distribution and device efficiency of flexible Cu(In,Ga)(S,Se) (CIGSSe) solar cells. Analysis involved characterizing the basic material properties of two absorber layers fabricated using sputtering targets of CuGa:Na or Mo: Na. We assessed the uniformity of Ga and Na distribution in the absorber layers. We also examined the effects of various sputtering parameters and sought to optimize the Na content. Finally, we compared the conversion efficiency of the solar cells fabricated using the two Na addition routes (targets of CuGa:Na or Mo:Na target) with the following structure: metal foil/Cr/Mo/CIGSSe/CdS/i-ZnO/ITO/Al. Experimental results show that the CuGa:Na target improved the Ga distribution on the surface of the CIGSSe absorber compared to the Mo:Na target. When applied at a CuGa:Na/In thickness ratio of 300 nm/300 nm, the conversion efficiency of the two devices was as follows: CIGSSe solar cell with Mo: Na-derived absorber layer (7.5%) and CIGSSe solar cell with CuGa: Na-derived absorber layer (9.81%).
AB - In this work, we proposed a novel CuGa-NaF (CuGa:Na) target route to improve Ga distribution and device efficiency of flexible Cu(In,Ga)(S,Se) (CIGSSe) solar cells. Analysis involved characterizing the basic material properties of two absorber layers fabricated using sputtering targets of CuGa:Na or Mo: Na. We assessed the uniformity of Ga and Na distribution in the absorber layers. We also examined the effects of various sputtering parameters and sought to optimize the Na content. Finally, we compared the conversion efficiency of the solar cells fabricated using the two Na addition routes (targets of CuGa:Na or Mo:Na target) with the following structure: metal foil/Cr/Mo/CIGSSe/CdS/i-ZnO/ITO/Al. Experimental results show that the CuGa:Na target improved the Ga distribution on the surface of the CIGSSe absorber compared to the Mo:Na target. When applied at a CuGa:Na/In thickness ratio of 300 nm/300 nm, the conversion efficiency of the two devices was as follows: CIGSSe solar cell with Mo: Na-derived absorber layer (7.5%) and CIGSSe solar cell with CuGa: Na-derived absorber layer (9.81%).
UR - http://www.scopus.com/inward/record.url?scp=85061107172&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85061107172&partnerID=8YFLogxK
U2 - 10.1016/j.mssp.2019.02.007
DO - 10.1016/j.mssp.2019.02.007
M3 - Article
AN - SCOPUS:85061107172
VL - 94
SP - 151
EP - 155
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
SN - 1369-8001
ER -