Improvement of Ni nonalloyed ohmic contacts on p-GaN films by changing thickness of p-InGaN capping layers

Yow Lin Chu, Yow-Jon Lin, Cheng Hsiang Ho, Wei-Li Chen

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4 Citations (Scopus)

Abstract

The influence of the thickness of p-type InGaN (p-InGaN) capping layers grown on p-type GaN (p-GaN) on the electrical properties of Ni contacts on p-GaN was investigated in this study. Experiments and simulations indicated that a thicker pInGaN capping layer grown on p-GaN led to the formation of a higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. In addition, owing to a low barrier at the interfaces, holes can be easily injected into the p-GaN layer through recessed channels and a 2DHG channel, resulting in the formation of nonalloyed ohmic contacts with a low specific contact resistance of 1.7 × 10-5 Ωcm2.

Original languageEnglish
Pages (from-to)6884-6887
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number9 A
DOIs
Publication statusPublished - 2006 Sep 7

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Ohmic contacts
Contact resistance
electric contacts
Electric properties
Gases
Experiments
contact resistance
electrical properties
gases
simulation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Improvement of Ni nonalloyed ohmic contacts on p-GaN films by changing thickness of p-InGaN capping layers",
abstract = "The influence of the thickness of p-type InGaN (p-InGaN) capping layers grown on p-type GaN (p-GaN) on the electrical properties of Ni contacts on p-GaN was investigated in this study. Experiments and simulations indicated that a thicker pInGaN capping layer grown on p-GaN led to the formation of a higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. In addition, owing to a low barrier at the interfaces, holes can be easily injected into the p-GaN layer through recessed channels and a 2DHG channel, resulting in the formation of nonalloyed ohmic contacts with a low specific contact resistance of 1.7 × 10-5 Ωcm2.",
author = "Chu, {Yow Lin} and Yow-Jon Lin and Ho, {Cheng Hsiang} and Wei-Li Chen",
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T1 - Improvement of Ni nonalloyed ohmic contacts on p-GaN films by changing thickness of p-InGaN capping layers

AU - Chu, Yow Lin

AU - Lin, Yow-Jon

AU - Ho, Cheng Hsiang

AU - Chen, Wei-Li

PY - 2006/9/7

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N2 - The influence of the thickness of p-type InGaN (p-InGaN) capping layers grown on p-type GaN (p-GaN) on the electrical properties of Ni contacts on p-GaN was investigated in this study. Experiments and simulations indicated that a thicker pInGaN capping layer grown on p-GaN led to the formation of a higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. In addition, owing to a low barrier at the interfaces, holes can be easily injected into the p-GaN layer through recessed channels and a 2DHG channel, resulting in the formation of nonalloyed ohmic contacts with a low specific contact resistance of 1.7 × 10-5 Ωcm2.

AB - The influence of the thickness of p-type InGaN (p-InGaN) capping layers grown on p-type GaN (p-GaN) on the electrical properties of Ni contacts on p-GaN was investigated in this study. Experiments and simulations indicated that a thicker pInGaN capping layer grown on p-GaN led to the formation of a higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. In addition, owing to a low barrier at the interfaces, holes can be easily injected into the p-GaN layer through recessed channels and a 2DHG channel, resulting in the formation of nonalloyed ohmic contacts with a low specific contact resistance of 1.7 × 10-5 Ωcm2.

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