The influence of the thickness of p-type InGaN (p-InGaN) capping layers grown on p-type GaN (p-GaN) on the electrical properties of Ni contacts on p-GaN was investigated in this study. Experiments and simulations indicated that a thicker pInGaN capping layer grown on p-GaN led to the formation of a higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. In addition, owing to a low barrier at the interfaces, holes can be easily injected into the p-GaN layer through recessed channels and a 2DHG channel, resulting in the formation of nonalloyed ohmic contacts with a low specific contact resistance of 1.7 × 10-5 Ωcm2.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||9 A|
|Publication status||Published - 2006 Sep 7|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)