Improvement of characteristic temperature for AlGaInP laser diodes

Jen Yu Chu; Cha Chang Hung; Man-Fang Huang; Chau Yang Lin; M. Yang

doi:10.1109/COS.2003.1278177

Improvement of characteristic temperature for AlGaInP laser diodes

Jen Yu Chu, Cha Chang Hung, Man-Fang Huang, Chau Yang Lin, M. Yang

Graduate Institute of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.

Original language	English
Title of host publication	Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
Editors	K. T. Chan, H. S. Kwok
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	108-111
Number of pages	4
ISBN (Electronic)	0780378873, 9780780378872
DOIs	https://doi.org/10.1109/COS.2003.1278177
Publication status	Published - 2003 Jan 1
Event	6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China Duration: 2003 Sep 12 → 2003 Sep 14

Other

Other	6th Chinese Optoelectronics Symposium, COES 2003
Country	China
City	Hong Kong
Period	03-09-12 → 03-09-14

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/COS.2003.1278177

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@inproceedings{3f21918a184c46e188dba32dce3199c2,

title = "Improvement of characteristic temperature for AlGaInP laser diodes",

abstract = "An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.",

author = "Chu, {Jen Yu} and Hung, {Cha Chang} and Man-Fang Huang and Lin, {Chau Yang} and M. Yang",

year = "2003",

month = jan,

day = "1",

doi = "10.1109/COS.2003.1278177",

language = "English",

pages = "108--111",

editor = "Chan, {K. T.} and Kwok, {H. S.}",

booktitle = "Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "6th Chinese Optoelectronics Symposium, COES 2003 ; Conference date: 12-09-2003 Through 14-09-2003",

}

Chu, JY, Hung, CC, Huang, M-F, Lin, CY & Yang, M 2003, Improvement of characteristic temperature for AlGaInP laser diodes. in KT Chan & HS Kwok (eds), Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003., 1278177, Institute of Electrical and Electronics Engineers Inc., pp. 108-111, 6th Chinese Optoelectronics Symposium, COES 2003, Hong Kong, China, 03-09-12. https://doi.org/10.1109/COS.2003.1278177

Improvement of characteristic temperature for AlGaInP laser diodes. / Chu, Jen Yu; Hung, Cha Chang; Huang, Man-Fang; Lin, Chau Yang; Yang, M.

Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003. ed. / K. T. Chan; H. S. Kwok. Institute of Electrical and Electronics Engineers Inc., 2003. p. 108-111 1278177.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Improvement of characteristic temperature for AlGaInP laser diodes

AU - Chu, Jen Yu

AU - Hung, Cha Chang

AU - Huang, Man-Fang

AU - Lin, Chau Yang

AU - Yang, M.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.

AB - An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.

UR - http://www.scopus.com/inward/record.url?scp=84945555569&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84945555569&partnerID=8YFLogxK

U2 - 10.1109/COS.2003.1278177

DO - 10.1109/COS.2003.1278177

M3 - Conference contribution

AN - SCOPUS:84945555569

SP - 108

EP - 111

BT - Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003

A2 - Chan, K. T.

A2 - Kwok, H. S.

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 6th Chinese Optoelectronics Symposium, COES 2003

Y2 - 12 September 2003 through 14 September 2003

ER -