Abstract
An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.
Original language | English |
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Title of host publication | Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003 |
Editors | K. T. Chan, H. S. Kwok |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 108-111 |
Number of pages | 4 |
ISBN (Electronic) | 0780378873, 9780780378872 |
DOIs | |
Publication status | Published - 2003 Jan 1 |
Event | 6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China Duration: 2003 Sep 12 → 2003 Sep 14 |
Other
Other | 6th Chinese Optoelectronics Symposium, COES 2003 |
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Country | China |
City | Hong Kong |
Period | 03-09-12 → 03-09-14 |
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials