Improvement of characteristic temperature for AlGaInP laser diodes

Jen Yu Chu, Cha Chang Hung, Man-Fang Huang, Chau Yang Lin, M. Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.

Original languageEnglish
Title of host publicationProceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
EditorsK. T. Chan, H. S. Kwok
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages108-111
Number of pages4
ISBN (Electronic)0780378873, 9780780378872
DOIs
Publication statusPublished - 2003 Jan 1
Event6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China
Duration: 2003 Sep 122003 Sep 14

Other

Other6th Chinese Optoelectronics Symposium, COES 2003
CountryChina
CityHong Kong
Period03-09-1203-09-14

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Chu, J. Y., Hung, C. C., Huang, M-F., Lin, C. Y., & Yang, M. (2003). Improvement of characteristic temperature for AlGaInP laser diodes. In K. T. Chan, & H. S. Kwok (Eds.), Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003 (pp. 108-111). [1278177] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COS.2003.1278177