Improvement of characteristic temperature for AlGaInP laser diodes

Jen Yu Chu; Cha Chang Hung; Man-Fang Huang; Chau Yang Lin; M. Yang

doi:10.1109/COS.2003.1278177

Improvement of characteristic temperature for AlGaInP laser diodes

Jen Yu Chu, Cha Chang Hung, Man-Fang Huang, Chau Yang Lin, M. Yang

Graduate Institute of Photonics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.

Original language	English
Title of host publication	Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003
Editors	K. T. Chan, H. S. Kwok
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	108-111
Number of pages	4
ISBN (Electronic)	0780378873, 9780780378872
DOIs	https://doi.org/10.1109/COS.2003.1278177
Publication status	Published - 2003 Jan 1
Event	6th Chinese Optoelectronics Symposium, COES 2003 - Hong Kong, China Duration: 2003 Sep 12 → 2003 Sep 14

Other

Other	6th Chinese Optoelectronics Symposium, COES 2003
Country	China
City	Hong Kong
Period	03-09-12 → 03-09-14

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All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Cite this

Chu, J. Y., Hung, C. C., Huang, M-F., Lin, C. Y., & Yang, M. (2003). Improvement of characteristic temperature for AlGaInP laser diodes. In K. T. Chan, & H. S. Kwok (Eds.), Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003 (pp. 108-111). [1278177] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/COS.2003.1278177

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abstract = "An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.",

author = "Chu, {Jen Yu} and Hung, {Cha Chang} and Man-Fang Huang and Lin, {Chau Yang} and M. Yang",

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Chu, JY, Hung, CC, Huang, M-F, Lin, CY & Yang, M 2003, Improvement of characteristic temperature for AlGaInP laser diodes. in KT Chan & HS Kwok (eds), Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003., 1278177, Institute of Electrical and Electronics Engineers Inc., pp. 108-111, 6th Chinese Optoelectronics Symposium, COES 2003, Hong Kong, China, 03-09-12. https://doi.org/10.1109/COS.2003.1278177

Improvement of characteristic temperature for AlGaInP laser diodes. / Chu, Jen Yu; Hung, Cha Chang; Huang, Man-Fang; Lin, Chau Yang; Yang, M.

Proceedings of the 6th Chinese Optoelectronics Symposium, COES 2003. ed. / K. T. Chan; H. S. Kwok. Institute of Electrical and Electronics Engineers Inc., 2003. p. 108-111 1278177.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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AB - An optimum structure of 650 nm-band compressive-strained AlGaInP MQW lasers with improved temperature characteristics is described. The comparison results of two different confinement layers and two different quantum well numbers, by their distinct performance of temperature dependence, will be demonstrated. With the optimized structure, the maximum operating temperature for the AlGaInP laser diodes can be improved.

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Access to Document

10.1109/COS.2003.1278177