Improvement of characteristic temperature for AlGaInP laser diodes

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

An optimized 650-nm AlGaInP multiple-quantum-well (MQW) laser, which has a compressively strained graded-index separate confinement heterostructure (GRIN-SCH), with improved characteristic temperature, is described. We theoretically show that the parabolic GRIN-SCH has a better carrier injection and smaller overflow than the conventional step-SCH for the AlGaInP LD under identical optical confinement. We have also calculated the electron distribution in the quantum wells for both GRIN-SCH-4QW and SCH-4QW at high temperature. The results indicate that the electron leakage to the p-cladding layer is greatly reduced if the GRIN-SCH-4QW structure is used. We have also compared the performance of LDs with different GRIN-SCH profiles and found that the parabolic GRIN-SCH is better than linear GRIN-SCH in terms of carrier confinement. We have further demonstrated the performance of AlGaInP LDs with four different structures (4-QW step-SCH, 5-QW step-SCH, 4-QW parabolic-GRIN-SCH and 5-QW parabolic-GRIN-SCH). Both theoretical and experimental results indicate that the laser diode with GRIN-SCH-4QW shows the best laser performance among the three structures. A characteristic temperature of 110 K has been demonstrated.

Original languageEnglish
Article number21
Pages (from-to)127-134
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5628
DOIs
Publication statusPublished - 2005 Jun 1
EventSemiconductor Lasers and Applications II - Beijing, China
Duration: 2004 Nov 82004 Nov 9

Fingerprint

Laser Diode
Heterostructures
Semiconductor lasers
Heterojunctions
semiconductor lasers
Temperature
temperature
Semiconductor quantum wells
Quantum Well
Quantum well lasers
Electron
Electrons
Laser
Overflow
carrier injection
quantum well lasers
electron distribution
Leakage
Injection
leakage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

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title = "Improvement of characteristic temperature for AlGaInP laser diodes",
abstract = "An optimized 650-nm AlGaInP multiple-quantum-well (MQW) laser, which has a compressively strained graded-index separate confinement heterostructure (GRIN-SCH), with improved characteristic temperature, is described. We theoretically show that the parabolic GRIN-SCH has a better carrier injection and smaller overflow than the conventional step-SCH for the AlGaInP LD under identical optical confinement. We have also calculated the electron distribution in the quantum wells for both GRIN-SCH-4QW and SCH-4QW at high temperature. The results indicate that the electron leakage to the p-cladding layer is greatly reduced if the GRIN-SCH-4QW structure is used. We have also compared the performance of LDs with different GRIN-SCH profiles and found that the parabolic GRIN-SCH is better than linear GRIN-SCH in terms of carrier confinement. We have further demonstrated the performance of AlGaInP LDs with four different structures (4-QW step-SCH, 5-QW step-SCH, 4-QW parabolic-GRIN-SCH and 5-QW parabolic-GRIN-SCH). Both theoretical and experimental results indicate that the laser diode with GRIN-SCH-4QW shows the best laser performance among the three structures. A characteristic temperature of 110 K has been demonstrated.",
author = "Man-Fang Huang and Tsai, {Meng Lun} and Yen-Kuang Kuo",
year = "2005",
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Improvement of characteristic temperature for AlGaInP laser diodes. / Huang, Man-Fang; Tsai, Meng Lun; Kuo, Yen-Kuang.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5628, 21, 01.06.2005, p. 127-134.

Research output: Contribution to journalConference article

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AU - Huang, Man-Fang

AU - Tsai, Meng Lun

AU - Kuo, Yen-Kuang

PY - 2005/6/1

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N2 - An optimized 650-nm AlGaInP multiple-quantum-well (MQW) laser, which has a compressively strained graded-index separate confinement heterostructure (GRIN-SCH), with improved characteristic temperature, is described. We theoretically show that the parabolic GRIN-SCH has a better carrier injection and smaller overflow than the conventional step-SCH for the AlGaInP LD under identical optical confinement. We have also calculated the electron distribution in the quantum wells for both GRIN-SCH-4QW and SCH-4QW at high temperature. The results indicate that the electron leakage to the p-cladding layer is greatly reduced if the GRIN-SCH-4QW structure is used. We have also compared the performance of LDs with different GRIN-SCH profiles and found that the parabolic GRIN-SCH is better than linear GRIN-SCH in terms of carrier confinement. We have further demonstrated the performance of AlGaInP LDs with four different structures (4-QW step-SCH, 5-QW step-SCH, 4-QW parabolic-GRIN-SCH and 5-QW parabolic-GRIN-SCH). Both theoretical and experimental results indicate that the laser diode with GRIN-SCH-4QW shows the best laser performance among the three structures. A characteristic temperature of 110 K has been demonstrated.

AB - An optimized 650-nm AlGaInP multiple-quantum-well (MQW) laser, which has a compressively strained graded-index separate confinement heterostructure (GRIN-SCH), with improved characteristic temperature, is described. We theoretically show that the parabolic GRIN-SCH has a better carrier injection and smaller overflow than the conventional step-SCH for the AlGaInP LD under identical optical confinement. We have also calculated the electron distribution in the quantum wells for both GRIN-SCH-4QW and SCH-4QW at high temperature. The results indicate that the electron leakage to the p-cladding layer is greatly reduced if the GRIN-SCH-4QW structure is used. We have also compared the performance of LDs with different GRIN-SCH profiles and found that the parabolic GRIN-SCH is better than linear GRIN-SCH in terms of carrier confinement. We have further demonstrated the performance of AlGaInP LDs with four different structures (4-QW step-SCH, 5-QW step-SCH, 4-QW parabolic-GRIN-SCH and 5-QW parabolic-GRIN-SCH). Both theoretical and experimental results indicate that the laser diode with GRIN-SCH-4QW shows the best laser performance among the three structures. A characteristic temperature of 110 K has been demonstrated.

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