Improvement in piezoelectric effect of violet InGaN laser diodes

Sheng Horng Yen, Yen-Kuang Kuo

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The laser performance of violet InGaN laser diodes is investigated numerically. The polarization-dependent properties, including overlap of electron and hole wavefunctions, threshold current, and slope efficiency, are studied through the use of step-like quantum well structure. Furthermore, the electron and hole wavefunctions, band diagrams, and emission wavelength are compared and analyzed. The simulation results show that the lowest threshold current and the highest slope efficiency are obtained when the step-like quantum well structure is designed as In0.12Ga0.88N (2.5 nm)-In0.18Ga0.82N (1 nm) or In0.18Ga0.82N (2.5 nm)-In0.12Ga0.88N (1 nm) for violet laser diodes due to sufficiently enhanced overlap of electron and hole wavefunctions.

Original languageEnglish
Pages (from-to)4735-4740
Number of pages6
JournalOptics Communications
Volume281
Issue number18
DOIs
Publication statusPublished - 2008 Sep 15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

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