Improvement in piezoelectric effect of violet InGaN laser diodes

Sheng Horng Yen, Yen-Kuang Kuo

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The laser performance of violet InGaN laser diodes is investigated numerically. The polarization-dependent properties, including overlap of electron and hole wavefunctions, threshold current, and slope efficiency, are studied through the use of step-like quantum well structure. Furthermore, the electron and hole wavefunctions, band diagrams, and emission wavelength are compared and analyzed. The simulation results show that the lowest threshold current and the highest slope efficiency are obtained when the step-like quantum well structure is designed as In0.12Ga0.88N (2.5 nm)-In0.18Ga0.82N (1 nm) or In0.18Ga0.82N (2.5 nm)-In0.12Ga0.88N (1 nm) for violet laser diodes due to sufficiently enhanced overlap of electron and hole wavefunctions.

Original languageEnglish
Pages (from-to)4735-4740
Number of pages6
JournalOptics Communications
Volume281
Issue number18
DOIs
Publication statusPublished - 2008 Sep 15

Fingerprint

Piezoelectricity
Wave functions
Semiconductor lasers
semiconductor lasers
threshold currents
Semiconductor quantum wells
Electrons
quantum wells
slopes
electrons
diagrams
Polarization
Wavelength
Lasers
polarization
wavelengths
lasers
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering

Cite this

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abstract = "The laser performance of violet InGaN laser diodes is investigated numerically. The polarization-dependent properties, including overlap of electron and hole wavefunctions, threshold current, and slope efficiency, are studied through the use of step-like quantum well structure. Furthermore, the electron and hole wavefunctions, band diagrams, and emission wavelength are compared and analyzed. The simulation results show that the lowest threshold current and the highest slope efficiency are obtained when the step-like quantum well structure is designed as In0.12Ga0.88N (2.5 nm)-In0.18Ga0.82N (1 nm) or In0.18Ga0.82N (2.5 nm)-In0.12Ga0.88N (1 nm) for violet laser diodes due to sufficiently enhanced overlap of electron and hole wavefunctions.",
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Improvement in piezoelectric effect of violet InGaN laser diodes. / Yen, Sheng Horng; Kuo, Yen-Kuang.

In: Optics Communications, Vol. 281, No. 18, 15.09.2008, p. 4735-4740.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improvement in piezoelectric effect of violet InGaN laser diodes

AU - Yen, Sheng Horng

AU - Kuo, Yen-Kuang

PY - 2008/9/15

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AB - The laser performance of violet InGaN laser diodes is investigated numerically. The polarization-dependent properties, including overlap of electron and hole wavefunctions, threshold current, and slope efficiency, are studied through the use of step-like quantum well structure. Furthermore, the electron and hole wavefunctions, band diagrams, and emission wavelength are compared and analyzed. The simulation results show that the lowest threshold current and the highest slope efficiency are obtained when the step-like quantum well structure is designed as In0.12Ga0.88N (2.5 nm)-In0.18Ga0.82N (1 nm) or In0.18Ga0.82N (2.5 nm)-In0.12Ga0.88N (1 nm) for violet laser diodes due to sufficiently enhanced overlap of electron and hole wavefunctions.

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