Improvement in output power of a 460 nm InGaN light-emitting diode using staggered quantum well

Chih Teng Liao, Miao Chan Tsai, Bo Ting Liou, Sheng Horng Yen, Yen Kuang Kuo

Research output: Contribution to journalArticle

79 Citations (Scopus)


Staggered quantum well structures are studied to eliminate the influence of polarization-induced electrostatic field upon the optical performance of blue InGaN light-emitting diodes (LEDs). Blue InGaN LEDs with various staggered quantum wells which vary in their indium compositions and quantum well width are theoretically studied and compared by using the APSYS simulation program. According to the simulation results, the best optical characteristic is obtained when the staggered quantum well is designed as In0.20 Ga 0.80 N (1.4 nm)- In0.26 Ga0.74 N (1.6 nm) for blue LEDs. Superiority of this novelty design is on the strength of its enhanced overlap of electron and hole wave functions, uniform distribution of holes, and suppressed electron leakage in the LED device.

Original languageEnglish
Article number063107
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 2010 Sep 15


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this