Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier

Yen Kuang Kuo, Ya Hsuan Shih, Miao Chan Tsai, Jih Yuan Chang

Research output: Contribution to journalArticle

33 Citations (Scopus)


Specific designs on the last barrier of near-ultraviolet InGaN light-emitting diodes are investigated numerically in order to diminish the electron leakage current without sacrificing the injection efficiency of holes. Due to the reduction of electron leakage current, the recombination of electrons and holes in the p-layers is decreased and, thus, more holes can be injected into the active region. The simulation results show that the optical performance and internal quantum efficiency are markedly improved when the last GaN barrier near the p-layers is partially replaced by In01 Ga0.99N layer and intentionally p-doped.

Original languageEnglish
Article number5995143
Pages (from-to)1630-1632
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number21
Publication statusPublished - 2011 Oct 28


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this