Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier

Yen-Kuang Kuo, Ya Hsuan Shih, Miao Chan Tsai, Jih-Yuan Chang

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Specific designs on the last barrier of near-ultraviolet InGaN light-emitting diodes are investigated numerically in order to diminish the electron leakage current without sacrificing the injection efficiency of holes. Due to the reduction of electron leakage current, the recombination of electrons and holes in the p-layers is decreased and, thus, more holes can be injected into the active region. The simulation results show that the optical performance and internal quantum efficiency are markedly improved when the last GaN barrier near the p-layers is partially replaced by In01 Ga0.99N layer and intentionally p-doped.

Original languageEnglish
Article number5995143
Pages (from-to)1630-1632
Number of pages3
JournalIEEE Photonics Technology Letters
Volume23
Issue number21
DOIs
Publication statusPublished - 2011 Oct 28

Fingerprint

Light emitting diodes
light emitting diodes
Leakage currents
Electrons
leakage
electrons
Quantum efficiency
ultraviolet radiation
quantum efficiency
injection
simulation
Ultraviolet Rays

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

@article{956467048af84b4cb828d54ce5e81d4b,
title = "Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier",
abstract = "Specific designs on the last barrier of near-ultraviolet InGaN light-emitting diodes are investigated numerically in order to diminish the electron leakage current without sacrificing the injection efficiency of holes. Due to the reduction of electron leakage current, the recombination of electrons and holes in the p-layers is decreased and, thus, more holes can be injected into the active region. The simulation results show that the optical performance and internal quantum efficiency are markedly improved when the last GaN barrier near the p-layers is partially replaced by In01 Ga0.99N layer and intentionally p-doped.",
author = "Yen-Kuang Kuo and Shih, {Ya Hsuan} and Tsai, {Miao Chan} and Jih-Yuan Chang",
year = "2011",
month = "10",
day = "28",
doi = "10.1109/LPT.2011.2165838",
language = "English",
volume = "23",
pages = "1630--1632",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "21",

}

Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier. / Kuo, Yen-Kuang; Shih, Ya Hsuan; Tsai, Miao Chan; Chang, Jih-Yuan.

In: IEEE Photonics Technology Letters, Vol. 23, No. 21, 5995143, 28.10.2011, p. 1630-1632.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improvement in electron overflow of near-ultraviolet InGaN LEDs by specific design on last barrier

AU - Kuo, Yen-Kuang

AU - Shih, Ya Hsuan

AU - Tsai, Miao Chan

AU - Chang, Jih-Yuan

PY - 2011/10/28

Y1 - 2011/10/28

N2 - Specific designs on the last barrier of near-ultraviolet InGaN light-emitting diodes are investigated numerically in order to diminish the electron leakage current without sacrificing the injection efficiency of holes. Due to the reduction of electron leakage current, the recombination of electrons and holes in the p-layers is decreased and, thus, more holes can be injected into the active region. The simulation results show that the optical performance and internal quantum efficiency are markedly improved when the last GaN barrier near the p-layers is partially replaced by In01 Ga0.99N layer and intentionally p-doped.

AB - Specific designs on the last barrier of near-ultraviolet InGaN light-emitting diodes are investigated numerically in order to diminish the electron leakage current without sacrificing the injection efficiency of holes. Due to the reduction of electron leakage current, the recombination of electrons and holes in the p-layers is decreased and, thus, more holes can be injected into the active region. The simulation results show that the optical performance and internal quantum efficiency are markedly improved when the last GaN barrier near the p-layers is partially replaced by In01 Ga0.99N layer and intentionally p-doped.

UR - http://www.scopus.com/inward/record.url?scp=80054872532&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054872532&partnerID=8YFLogxK

U2 - 10.1109/LPT.2011.2165838

DO - 10.1109/LPT.2011.2165838

M3 - Article

AN - SCOPUS:80054872532

VL - 23

SP - 1630

EP - 1632

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 21

M1 - 5995143

ER -