Abstract
The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In 0.2 Ga0.8 N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.
| Original language | English |
|---|---|
| Article number | 6353514 |
| Pages (from-to) | 55-58 |
| Number of pages | 4 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 25 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2013 Jan 7 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Chang, J. Y., Chang, Y. A., Chen, F. M., Kuo, Y. T., & Kuo, Y. K. (2013). Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers. IEEE Photonics Technology Letters, 25(1), 55-58. [6353514]. https://doi.org/10.1109/LPT.2012.2227700