Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers

Jih Yuan Chang; Yi An Chang; Fang Ming Chen; Yih Ting Kuo; Yen Kuang Kuo

doi:10.1109/LPT.2012.2227700

Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers

Jih Yuan Chang, Yi An Chang, Fang Ming Chen, Yih Ting Kuo, Yen Kuang Kuo

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In _0.2 Ga_0.8 N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.

Original language	English
Article number	6353514
Pages (from-to)	55-58
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2012.2227700
Publication status	Published - 2013 Jan 7

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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abstract = "The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In 0.2 Ga0.8 N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.",

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AU - Chang, Jih Yuan

AU - Chang, Yi An

AU - Chen, Fang Ming

AU - Kuo, Yih Ting

AU - Kuo, Yen Kuang

PY - 2013/1/7

Y1 - 2013/1/7

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AB - The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In 0.2 Ga0.8 N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.

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