Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers

Jih Yuan Chang; Yi An Chang; Fang Ming Chen; Yih Ting Kuo; Yen Kuang Kuo

doi:10.1109/LPT.2012.2227700

Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers

Jih Yuan Chang, Yi An Chang, Fang Ming Chen, Yih Ting Kuo, Yen Kuang Kuo

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11 Citations (Scopus)

Abstract

The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In _0.2 Ga_0.8 N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.

Original language	English
Article number	6353514
Pages (from-to)	55-58
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	1
DOIs	https://doi.org/10.1109/LPT.2012.2227700
Publication status	Published - 2013 Jan 7

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

Chang, J. Y., Chang, Y. A., Chen, F. M., Kuo, Y. T., & Kuo, Y. K. (2013). Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers. IEEE Photonics Technology Letters, 25(1), 55-58. [6353514]. https://doi.org/10.1109/LPT.2012.2227700

@article{46aaf653f7ce433b8e67f4afa50840c0,

title = "Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers",

abstract = "The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In 0.2 Ga0.8 N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.",

author = "Chang, {Jih Yuan} and Chang, {Yi An} and Chen, {Fang Ming} and Kuo, {Yih Ting} and Kuo, {Yen Kuang}",

year = "2013",

month = "1",

day = "7",

doi = "10.1109/LPT.2012.2227700",

language = "English",

volume = "25",

pages = "55--58",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Improved quantum efficiency in green InGaN light-emitting diodes with InGaN barriers

AU - Chang, Jih Yuan

AU - Chang, Yi An

AU - Chen, Fang Ming

AU - Kuo, Yih Ting

AU - Kuo, Yen Kuang

PY - 2013/1/7

Y1 - 2013/1/7

N2 - The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In 0.2 Ga0.8 N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.

AB - The characteristics of green InGaN light-emitting diodes (LEDs) are investigated. The results obtained numerically show that the optical performance of green InGaN LEDs is deteriorated severely by Auger recombination, which becomes more severe at high current injection levels. Through employing In 0.2 Ga0.8 N as barrier material, the radiative recombination efficiency is enhanced and the Auger recombination is suppressed efficiently because of the better electron-hole spatial overlap and the more uniform carrier distribution in the active region.

UR - http://www.scopus.com/inward/record.url?scp=84871805836&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84871805836&partnerID=8YFLogxK

U2 - 10.1109/LPT.2012.2227700

DO - 10.1109/LPT.2012.2227700

M3 - Article

AN - SCOPUS:84871805836

VL - 25

SP - 55

EP - 58

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 1

M1 - 6353514

ER -

Access to Document

10.1109/LPT.2012.2227700