Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

Chia Hua Chan, Chia Hung Hou, Shao Ze Tseng, Tsing Jen Chen, Hung Ta Chien, Fu Li Hsiao, Chien Chieh Lee, Yen Ling Tsai, Chii Chang Chen

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Abstract

This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO 2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω -scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.

Original languageEnglish
Article number011110
JournalApplied Physics Letters
Volume95
Issue number1
DOIs
Publication statusPublished - 2009 Jul 20

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chan, C. H., Hou, C. H., Tseng, S. Z., Chen, T. J., Chien, H. T., Hsiao, F. L., Lee, C. C., Tsai, Y. L., & Chen, C. C. (2009). Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate. Applied Physics Letters, 95(1), [011110]. https://doi.org/10.1063/1.3173817