Improved near-infrared luminescence of Si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence

Chia Yang Chen, Chun Jung Lin, Hao Chung Kuo, Gong Ru Lin, Yu Lun Chueh, Li Jen Chou, Chih-Wei Chang, Eric Wei Guang Diau

Research output: Contribution to journalConference article

Abstract

The optimized N2O fluence for plasma enhanced chemical vapor deposition (PECVD) growing silicon-rich substoichiometric silicon oxide (SiOx) with buried Si nanocrystals is demonstrated. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx thin films grown by PECVD with N2O fluence varying from 105 to 130 seem. After annealing from 15 to 180 min, a 22-nm-redshift of the PL has been detected. The maximum PL intensity is observed for the 30-min annealed SiOx growing at N2O fluence at 120 seem. Larger N2O fluence and longer annealing time causes a PL blueshift by 65 nm and 20 nm, respectively. Such a blueshift is attributed to shrinkage in the size of the Si nanocrystals under the participation of dissolved oxygen atoms from N2O. The (220)-oriented Si nanocrystals with radius ranging from 4.4 to 5.0 nm are determined. The luminescent lifetimes lengthens from 20 μs to 52 μs as the nc-Si size extends from 4.0 to 4.2 nm. Optimal annealing times for SiOx preparing at different N2O fluences and an optimum N2O fluence of 120 seem are reported. Serious oxidation effect at larger N2O fluence condition is observed, providing smaller PL intensity at shorter wavelengths. In contrast, the larger size nc-Si will be precipitated when N2O fluence becomes smaller, leading to a weaker PL at longer wavelength. These results provide the optimized growth condition for the Si-rich SiO2 with buried Si nanocrystals.

Original languageEnglish
Article number86
Pages (from-to)592-599
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5713
DOIs
Publication statusPublished - 2005 Aug 22
EventPhoton Processing in Microelectronics and Photonics IV - San Jose, CA, United States
Duration: 2005 Jan 242005 Jan 27

Fingerprint

Nanocrystals
Nitrous Oxide
Chemical Vapor Deposition
Luminescence
SiO2
Plasma enhanced chemical vapor deposition
Photoluminescence
nanocrystals
fluence
Infrared
Plasma
Silicon oxides
vapor deposition
luminescence
Infrared radiation
silicon oxides
photoluminescence
Silicon
Oxides
Annealing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Chen, Chia Yang ; Lin, Chun Jung ; Kuo, Hao Chung ; Lin, Gong Ru ; Chueh, Yu Lun ; Chou, Li Jen ; Chang, Chih-Wei ; Diau, Eric Wei Guang. / Improved near-infrared luminescence of Si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence. In: Proceedings of SPIE - The International Society for Optical Engineering. 2005 ; Vol. 5713. pp. 592-599.
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title = "Improved near-infrared luminescence of Si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence",
abstract = "The optimized N2O fluence for plasma enhanced chemical vapor deposition (PECVD) growing silicon-rich substoichiometric silicon oxide (SiOx) with buried Si nanocrystals is demonstrated. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx thin films grown by PECVD with N2O fluence varying from 105 to 130 seem. After annealing from 15 to 180 min, a 22-nm-redshift of the PL has been detected. The maximum PL intensity is observed for the 30-min annealed SiOx growing at N2O fluence at 120 seem. Larger N2O fluence and longer annealing time causes a PL blueshift by 65 nm and 20 nm, respectively. Such a blueshift is attributed to shrinkage in the size of the Si nanocrystals under the participation of dissolved oxygen atoms from N2O. The (220)-oriented Si nanocrystals with radius ranging from 4.4 to 5.0 nm are determined. The luminescent lifetimes lengthens from 20 μs to 52 μs as the nc-Si size extends from 4.0 to 4.2 nm. Optimal annealing times for SiOx preparing at different N2O fluences and an optimum N2O fluence of 120 seem are reported. Serious oxidation effect at larger N2O fluence condition is observed, providing smaller PL intensity at shorter wavelengths. In contrast, the larger size nc-Si will be precipitated when N2O fluence becomes smaller, leading to a weaker PL at longer wavelength. These results provide the optimized growth condition for the Si-rich SiO2 with buried Si nanocrystals.",
author = "Chen, {Chia Yang} and Lin, {Chun Jung} and Kuo, {Hao Chung} and Lin, {Gong Ru} and Chueh, {Yu Lun} and Chou, {Li Jen} and Chih-Wei Chang and Diau, {Eric Wei Guang}",
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Improved near-infrared luminescence of Si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence. / Chen, Chia Yang; Lin, Chun Jung; Kuo, Hao Chung; Lin, Gong Ru; Chueh, Yu Lun; Chou, Li Jen; Chang, Chih-Wei; Diau, Eric Wei Guang.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5713, 86, 22.08.2005, p. 592-599.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Improved near-infrared luminescence of Si-rich SiO2 with buried Si nanocrystals grown by PECVD at optimized N2O fluence

AU - Chen, Chia Yang

AU - Lin, Chun Jung

AU - Kuo, Hao Chung

AU - Lin, Gong Ru

AU - Chueh, Yu Lun

AU - Chou, Li Jen

AU - Chang, Chih-Wei

AU - Diau, Eric Wei Guang

PY - 2005/8/22

Y1 - 2005/8/22

N2 - The optimized N2O fluence for plasma enhanced chemical vapor deposition (PECVD) growing silicon-rich substoichiometric silicon oxide (SiOx) with buried Si nanocrystals is demonstrated. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx thin films grown by PECVD with N2O fluence varying from 105 to 130 seem. After annealing from 15 to 180 min, a 22-nm-redshift of the PL has been detected. The maximum PL intensity is observed for the 30-min annealed SiOx growing at N2O fluence at 120 seem. Larger N2O fluence and longer annealing time causes a PL blueshift by 65 nm and 20 nm, respectively. Such a blueshift is attributed to shrinkage in the size of the Si nanocrystals under the participation of dissolved oxygen atoms from N2O. The (220)-oriented Si nanocrystals with radius ranging from 4.4 to 5.0 nm are determined. The luminescent lifetimes lengthens from 20 μs to 52 μs as the nc-Si size extends from 4.0 to 4.2 nm. Optimal annealing times for SiOx preparing at different N2O fluences and an optimum N2O fluence of 120 seem are reported. Serious oxidation effect at larger N2O fluence condition is observed, providing smaller PL intensity at shorter wavelengths. In contrast, the larger size nc-Si will be precipitated when N2O fluence becomes smaller, leading to a weaker PL at longer wavelength. These results provide the optimized growth condition for the Si-rich SiO2 with buried Si nanocrystals.

AB - The optimized N2O fluence for plasma enhanced chemical vapor deposition (PECVD) growing silicon-rich substoichiometric silicon oxide (SiOx) with buried Si nanocrystals is demonstrated. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx thin films grown by PECVD with N2O fluence varying from 105 to 130 seem. After annealing from 15 to 180 min, a 22-nm-redshift of the PL has been detected. The maximum PL intensity is observed for the 30-min annealed SiOx growing at N2O fluence at 120 seem. Larger N2O fluence and longer annealing time causes a PL blueshift by 65 nm and 20 nm, respectively. Such a blueshift is attributed to shrinkage in the size of the Si nanocrystals under the participation of dissolved oxygen atoms from N2O. The (220)-oriented Si nanocrystals with radius ranging from 4.4 to 5.0 nm are determined. The luminescent lifetimes lengthens from 20 μs to 52 μs as the nc-Si size extends from 4.0 to 4.2 nm. Optimal annealing times for SiOx preparing at different N2O fluences and an optimum N2O fluence of 120 seem are reported. Serious oxidation effect at larger N2O fluence condition is observed, providing smaller PL intensity at shorter wavelengths. In contrast, the larger size nc-Si will be precipitated when N2O fluence becomes smaller, leading to a weaker PL at longer wavelength. These results provide the optimized growth condition for the Si-rich SiO2 with buried Si nanocrystals.

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