Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons

Jenq-Shinn Wu; C. P. Lee; C. Y. Chang; K. H. Chang; D. G. Liu; D. C. Liou

doi:10.1063/1.347385

Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons

Jenq-Shinn Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, D. C. Liou

Department of Electronic Engineering

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6 Citations (Scopus)

Abstract

We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-μm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.

Original language	English
Pages (from-to)	1122-1123
Number of pages	2
Journal	Journal of Applied Physics
Volume	69
Issue number	2
DOIs	https://doi.org/10.1063/1.347385
Publication status	Published - 1991 Dec 1

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All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

Wu, J-S., Lee, C. P., Chang, C. Y., Chang, K. H., Liu, D. G., & Liou, D. C. (1991). Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons. Journal of Applied Physics, 69(2), 1122-1123. https://doi.org/10.1063/1.347385

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AU - Liou, D. C.

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10.1063/1.347385