Abstract
We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-μm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 1122-1123 |
| Number of pages | 2 |
| Journal | Journal of Applied Physics |
| Volume | 69 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1991 Dec 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
}
Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons. / Wu, Jenq-Shinn; Lee, C. P.; Chang, C. Y.; Chang, K. H.; Liu, D. G.; Liou, D. C.
In: Journal of Applied Physics, Vol. 69, No. 2, 01.12.1991, p. 1122-1123.Research output: Contribution to journal › Article
TY - JOUR
T1 - Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons
AU - Wu, Jenq-Shinn
AU - Lee, C. P.
AU - Chang, C. Y.
AU - Chang, K. H.
AU - Liu, D. G.
AU - Liou, D. C.
PY - 1991/12/1
Y1 - 1991/12/1
N2 - We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-μm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.
AB - We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-μm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.
UR - http://www.scopus.com/inward/record.url?scp=36449007994&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=36449007994&partnerID=8YFLogxK
U2 - 10.1063/1.347385
DO - 10.1063/1.347385
M3 - Article
AN - SCOPUS:36449007994
VL - 69
SP - 1122
EP - 1123
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
ER -