Abstract
We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-μm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.
| Original language | English |
|---|---|
| Pages (from-to) | 1122-1123 |
| Number of pages | 2 |
| Journal | Journal of Applied Physics |
| Volume | 69 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 1991 Dec 1 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Wu, J-S., Lee, C. P., Chang, C. Y., Chang, K. H., Liu, D. G., & Liou, D. C. (1991). Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons. Journal of Applied Physics, 69(2), 1122-1123. https://doi.org/10.1063/1.347385