Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons

Jenq-Shinn Wu, C. P. Lee, C. Y. Chang, K. H. Chang, D. G. Liu, D. C. Liou

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report the enhancement of peak-to-valley current ratios (PVCRs) of double-barrier resonant tunneling structures (DBRTSs) based on the AlGaAs/GaAs material system. The PVCRs as high as 25.4 and 18 have been obtained at 77 K for superlattice and alloy barrier structures with 0.2-μm undoped electrodes, respectively. These are the largest PVCRs to date for AlGaAs/GaAs DBRTSs. The large band bending across the undoped electrodes causes size quantization of the accumulation layer, resulting in better resonant tunneling characteristics.

Original languageEnglish
Pages (from-to)1122-1123
Number of pages2
JournalJournal of Applied Physics
Volume69
Issue number2
DOIs
Publication statusPublished - 1991 Dec 1

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electron sources
resonant tunneling
valleys
aluminum gallium arsenides
electrodes
augmentation
causes

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Wu, Jenq-Shinn ; Lee, C. P. ; Chang, C. Y. ; Chang, K. H. ; Liu, D. G. ; Liou, D. C. / Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons. In: Journal of Applied Physics. 1991 ; Vol. 69, No. 2. pp. 1122-1123.
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Improved AlGaAs/GaAs double-barrier resonant tunneling structures using two-dimensional source electrons. / Wu, Jenq-Shinn; Lee, C. P.; Chang, C. Y.; Chang, K. H.; Liu, D. G.; Liou, D. C.

In: Journal of Applied Physics, Vol. 69, No. 2, 01.12.1991, p. 1122-1123.

Research output: Contribution to journalArticle

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