Hysteresis-type current-voltage characteristics of indium tin oxide/poly (3,4-ethylenedioxythiophene) doped with poly (4-styrenesulfonate)/indium tin oxide devices

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In this study, electrical characteristics of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)/ITO devices have been investigated. The current-voltage (I-V) characteristics of devices show hysteresis behavior, and the hysteresis is formally described by different voltage amplitudes for the sweep from negative to positive bias and the reverse direction. According to the experimental results, the author suggested that donorlike trap states within the PEDOT:PSS layer controlled carrier flow and resulted in hysteresis-type I-V characteristics of ITO/PEDOT:PSS/ITO devices.

Original languageEnglish
Article number063702
JournalJournal of Applied Physics
Issue number6
Publication statusPublished - 2008 Apr 8


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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