Hysteresis-type current-voltage characteristics of indium tin oxide/poly (3,4-ethylenedioxythiophene) doped with poly (4-styrenesulfonate)/indium tin oxide devices

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Abstract

In this study, electrical characteristics of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)/ITO devices have been investigated. The current-voltage (I-V) characteristics of devices show hysteresis behavior, and the hysteresis is formally described by different voltage amplitudes for the sweep from negative to positive bias and the reverse direction. According to the experimental results, the author suggested that donorlike trap states within the PEDOT:PSS layer controlled carrier flow and resulted in hysteresis-type I-V characteristics of ITO/PEDOT:PSS/ITO devices.

Original languageEnglish
Article number063702
JournalJournal of Applied Physics
Volume103
Issue number6
DOIs
Publication statusPublished - 2008 Apr 8

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indium oxides
tin oxides
hysteresis
electric potential
ITO (semiconductors)
traps

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Hysteresis-type current-voltage characteristics of indium tin oxide/poly (3,4-ethylenedioxythiophene) doped with poly (4-styrenesulfonate)/indium tin oxide devices",
abstract = "In this study, electrical characteristics of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)/ITO devices have been investigated. The current-voltage (I-V) characteristics of devices show hysteresis behavior, and the hysteresis is formally described by different voltage amplitudes for the sweep from negative to positive bias and the reverse direction. According to the experimental results, the author suggested that donorlike trap states within the PEDOT:PSS layer controlled carrier flow and resulted in hysteresis-type I-V characteristics of ITO/PEDOT:PSS/ITO devices.",
author = "Yow-Jon Lin",
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T1 - Hysteresis-type current-voltage characteristics of indium tin oxide/poly (3,4-ethylenedioxythiophene) doped with poly (4-styrenesulfonate)/indium tin oxide devices

AU - Lin, Yow-Jon

PY - 2008/4/8

Y1 - 2008/4/8

N2 - In this study, electrical characteristics of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)/ITO devices have been investigated. The current-voltage (I-V) characteristics of devices show hysteresis behavior, and the hysteresis is formally described by different voltage amplitudes for the sweep from negative to positive bias and the reverse direction. According to the experimental results, the author suggested that donorlike trap states within the PEDOT:PSS layer controlled carrier flow and resulted in hysteresis-type I-V characteristics of ITO/PEDOT:PSS/ITO devices.

AB - In this study, electrical characteristics of indium tin oxide (ITO)/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS)/ITO devices have been investigated. The current-voltage (I-V) characteristics of devices show hysteresis behavior, and the hysteresis is formally described by different voltage amplitudes for the sweep from negative to positive bias and the reverse direction. According to the experimental results, the author suggested that donorlike trap states within the PEDOT:PSS layer controlled carrier flow and resulted in hysteresis-type I-V characteristics of ITO/PEDOT:PSS/ITO devices.

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