Hysteresis mechanism in current-voltage characteristics of ZrOx films prepared by the sol-gel method

Yow-Jon Lin, Wei Chung Chen, Yi Min Chin, Chia-Jyi Liu

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


In the study, ZrOx films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence and conductivity measurements were used to characterize the films. The authors found that the displacement current of oxygen-rich ZrO x films was smaller than that of oxygen-deficient ZrOx films. According to the experimental results, the authors suggested that donor-like oxygen-vacancy related and crystallographic defects within the ZrOx film controlled carrier flow and resulted in hysteresis-type current-voltage characteristics of indium tin oxide/ZrOx/Au devices.

Original languageEnglish
Article number045419
JournalJournal of Physics D: Applied Physics
Issue number4
Publication statusPublished - 2009 Jul 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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