Hysteresis mechanism in current-voltage characteristics of ZrOx films prepared by the sol-gel method

Yow-Jon Lin, Wei Chung Chen, Yi Min Chin, Chia-Jyi Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In the study, ZrOx films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence and conductivity measurements were used to characterize the films. The authors found that the displacement current of oxygen-rich ZrO x films was smaller than that of oxygen-deficient ZrOx films. According to the experimental results, the authors suggested that donor-like oxygen-vacancy related and crystallographic defects within the ZrOx film controlled carrier flow and resulted in hysteresis-type current-voltage characteristics of indium tin oxide/ZrOx/Au devices.

Original languageEnglish
Article number045419
JournalJournal of Physics D: Applied Physics
Volume42
Issue number4
DOIs
Publication statusPublished - 2009 Jul 14

Fingerprint

Current voltage characteristics
Sol-gel process
Hysteresis
hysteresis
gels
electric potential
oxygen
Oxygen
Oxygen vacancies
Tin oxides
indium oxides
Indium
tin oxides
Sol-gels
Photoluminescence
x ray diffraction
X ray photoelectron spectroscopy
Diffraction
photoelectron spectroscopy
photoluminescence

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

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abstract = "In the study, ZrOx films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence and conductivity measurements were used to characterize the films. The authors found that the displacement current of oxygen-rich ZrO x films was smaller than that of oxygen-deficient ZrOx films. According to the experimental results, the authors suggested that donor-like oxygen-vacancy related and crystallographic defects within the ZrOx film controlled carrier flow and resulted in hysteresis-type current-voltage characteristics of indium tin oxide/ZrOx/Au devices.",
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Hysteresis mechanism in current-voltage characteristics of ZrOx films prepared by the sol-gel method. / Lin, Yow-Jon; Chen, Wei Chung; Chin, Yi Min; Liu, Chia-Jyi.

In: Journal of Physics D: Applied Physics, Vol. 42, No. 4, 045419, 14.07.2009.

Research output: Contribution to journalArticle

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AB - In the study, ZrOx films were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence and conductivity measurements were used to characterize the films. The authors found that the displacement current of oxygen-rich ZrO x films was smaller than that of oxygen-deficient ZrOx films. According to the experimental results, the authors suggested that donor-like oxygen-vacancy related and crystallographic defects within the ZrOx film controlled carrier flow and resulted in hysteresis-type current-voltage characteristics of indium tin oxide/ZrOx/Au devices.

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