Hysteresis-Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters

Shuai Liu, Kai Yuan, Xiaolong Xu, Ruoyu Yin, Der-Yuh Lin, Yanping Li, Kenji Watanabe, Takashi Taniguchi, Yongqiang Meng, Lun Dai, Yu Ye

Research output: Contribution to journalArticle

Abstract

Graphene and subsequently discovered layered semiconducting transition metal dichalcogenides (TMDCs) exhibit numerous exotic physical properties and broad potential device applications. These 2D semiconducting TMDCs have become particularly interesting in next-generation electronic device applications due to their atomic thickness and nonzero bandgap. However, as there is no bulk volume, the 2D nature makes the electronic transport in these crystals highly sensitive to the environmental conditions, such as humidity, adsorbates, and trapped charges in neighboring dielectrics. Due to this environmental sensitivity, 2D-based circuits and devices suffer from a large and undesirable environment-induced hysteresis, which must be eliminated for reliable operation and computation. By mechanically assembling van der Waals (vdWs) heterostructures and edge-contacted graphite electrodes, the 2D semiconducting channel is sealed completely and protected. Here, hexagonal boron nitride (hBN) encapsulated high-performance, hysteresis-free 2D semiconductor transistors, n-type metal-oxide semiconductor, and complementary metal-oxide semiconductor inverters are fabricated. The hBN encapsulation provides excellent protection of semiconducting n-MoS2 and p-WSe2 from environmental factors, resulting in hysteresis-free 2D electronics characteristics that are necessary for the realization of 2D electronics and computing.

Original languageEnglish
Article number1800419
JournalAdvanced Electronic Materials
Volume5
Issue number2
DOIs
Publication statusPublished - 2019 Feb 1

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Boron nitride
Hysteresis
Transistors
Semiconductor materials
Transition metals
Electronic equipment
Metals
Graphite electrodes
Graphite
Adsorbates
Encapsulation
Graphene
Heterojunctions
Atmospheric humidity
Energy gap
Physical properties
Crystals
Networks (circuits)
boron nitride
Oxide semiconductors

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

Liu, Shuai ; Yuan, Kai ; Xu, Xiaolong ; Yin, Ruoyu ; Lin, Der-Yuh ; Li, Yanping ; Watanabe, Kenji ; Taniguchi, Takashi ; Meng, Yongqiang ; Dai, Lun ; Ye, Yu. / Hysteresis-Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters. In: Advanced Electronic Materials. 2019 ; Vol. 5, No. 2.
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author = "Shuai Liu and Kai Yuan and Xiaolong Xu and Ruoyu Yin and Der-Yuh Lin and Yanping Li and Kenji Watanabe and Takashi Taniguchi and Yongqiang Meng and Lun Dai and Yu Ye",
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Liu, S, Yuan, K, Xu, X, Yin, R, Lin, D-Y, Li, Y, Watanabe, K, Taniguchi, T, Meng, Y, Dai, L & Ye, Y 2019, 'Hysteresis-Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters', Advanced Electronic Materials, vol. 5, no. 2, 1800419. https://doi.org/10.1002/aelm.201800419

Hysteresis-Free Hexagonal Boron Nitride Encapsulated 2D Semiconductor Transistors, NMOS and CMOS Inverters. / Liu, Shuai; Yuan, Kai; Xu, Xiaolong; Yin, Ruoyu; Lin, Der-Yuh; Li, Yanping; Watanabe, Kenji; Taniguchi, Takashi; Meng, Yongqiang; Dai, Lun; Ye, Yu.

In: Advanced Electronic Materials, Vol. 5, No. 2, 1800419, 01.02.2019.

Research output: Contribution to journalArticle

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AU - Liu, Shuai

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AU - Yin, Ruoyu

AU - Lin, Der-Yuh

AU - Li, Yanping

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Meng, Yongqiang

AU - Dai, Lun

AU - Ye, Yu

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