Hybrid stacking structure of electroplated copper onto graphene for future interconnect applications

Ya Wen Su, Cen Shawn Wu, Chih Hua Liu, Hung Yi Lin, Chii Dong Chen

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We show the feasibility of copper electroplating using graphene as a seed layer. Thermal annealing of the as-plated copper-graphene hybrid system promotes permeation of copper into graphene, forming an intermixing layer with enlarged lattice constant. It is shown that this intermixing layer blocks the diffusion of copper into the bottom SiO2/Si substrate at temperatures up to 900°C. The electroplating process is comparable with current semiconductor fabrication technology. This hybrid system can serve as interconnect in the integrated circuits.

Original languageEnglish
Article number093105
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2015 Aug 31


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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