Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs

Jian Jhou Zeng; Cheng Lung Tsai; Yow Jon Lin

doi:10.1016/j.synthmet.2012.06.010

Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs

Jian Jhou Zeng, Cheng Lung Tsai, Yow Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.

Original language	English
Pages (from-to)	1411-1415
Number of pages	5
Journal	Synthetic Metals
Volume	162
Issue number	15-16
DOIs	https://doi.org/10.1016/j.synthmet.2012.06.010
Publication status	Published - 2012 Sep 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Cite this

Zeng, J. J., Tsai, C. L., & Lin, Y. J. (2012). Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs. Synthetic Metals, 162(15-16), 1411-1415. https://doi.org/10.1016/j.synthmet.2012.06.010

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10.1016/j.synthmet.2012.06.010