Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs

Jian Jhou Zeng, Cheng Lung Tsai, Yow-Jon Lin

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.

Original languageEnglish
Pages (from-to)1411-1415
Number of pages5
JournalSynthetic Metals
Volume162
Issue number15-16
DOIs
Publication statusPublished - 2012 Sep 1

Fingerprint

Graphite
Oxides
Graphene
graphene
Polymers
composite materials
oxides
Composite materials
polymers
Doping (additives)
Hole mobility
Carrier mobility
hole mobility
short circuit currents
carrier mobility
Photocurrents
Short circuit currents
photocurrents
trapping
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{dfd8de411ba84d6f8dd65aa55b5631b5,
title = "Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs",
abstract = "We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.",
author = "Zeng, {Jian Jhou} and Tsai, {Cheng Lung} and Yow-Jon Lin",
year = "2012",
month = "9",
day = "1",
doi = "10.1016/j.synthmet.2012.06.010",
language = "English",
volume = "162",
pages = "1411--1415",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "15-16",

}

Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs. / Zeng, Jian Jhou; Tsai, Cheng Lung; Lin, Yow-Jon.

In: Synthetic Metals, Vol. 162, No. 15-16, 01.09.2012, p. 1411-1415.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs

AU - Zeng, Jian Jhou

AU - Tsai, Cheng Lung

AU - Lin, Yow-Jon

PY - 2012/9/1

Y1 - 2012/9/1

N2 - We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.

AB - We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.

UR - http://www.scopus.com/inward/record.url?scp=84863465373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863465373&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2012.06.010

DO - 10.1016/j.synthmet.2012.06.010

M3 - Article

AN - SCOPUS:84863465373

VL - 162

SP - 1411

EP - 1415

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 15-16

ER -