Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs

Jian Jhou Zeng; Cheng Lung Tsai; Yow Jon Lin

doi:10.1016/j.synthmet.2012.06.010

Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs

Jian Jhou Zeng, Cheng Lung Tsai, Yow Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.

Original language	English
Pages (from-to)	1411-1415
Number of pages	5
Journal	Synthetic Metals
Volume	162
Issue number	15-16
DOIs	https://doi.org/10.1016/j.synthmet.2012.06.010
Publication status	Published - 2012 Sep 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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@article{dfd8de411ba84d6f8dd65aa55b5631b5,

title = "Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs",

abstract = "We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.",

author = "Zeng, {Jian Jhou} and Tsai, {Cheng Lung} and Lin, {Yow Jon}",

year = "2012",

month = sep,

day = "1",

doi = "10.1016/j.synthmet.2012.06.010",

language = "English",

volume = "162",

pages = "1411--1415",

journal = "Synthetic Metals",

issn = "0379-6779",

publisher = "Elsevier BV",

number = "15-16",

}

TY - JOUR

T1 - Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs

AU - Zeng, Jian Jhou

AU - Tsai, Cheng Lung

AU - Lin, Yow Jon

PY - 2012/9/1

Y1 - 2012/9/1

N2 - We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.

AB - We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.

UR - http://www.scopus.com/inward/record.url?scp=84863465373&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863465373&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2012.06.010

DO - 10.1016/j.synthmet.2012.06.010

M3 - Article

AN - SCOPUS:84863465373

VL - 162

SP - 1411

EP - 1415

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 15-16

ER -