Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs

Jian Jhou Zeng, Cheng Lung Tsai, Yow Jon Lin

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13 Citations (Scopus)


We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.

Original languageEnglish
Pages (from-to)1411-1415
Number of pages5
JournalSynthetic Metals
Issue number15-16
Publication statusPublished - 2012 Sep 1


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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