Abstract
We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.
| Original language | English |
|---|---|
| Pages (from-to) | 1411-1415 |
| Number of pages | 5 |
| Journal | Synthetic Metals |
| Volume | 162 |
| Issue number | 15-16 |
| DOIs | |
| Publication status | Published - 2012 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Mechanical Engineering
- Mechanics of Materials
- Materials Chemistry
- Metals and Alloys
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
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Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs. / Zeng, Jian Jhou; Tsai, Cheng Lung; Lin, Yow-Jon.
In: Synthetic Metals, Vol. 162, No. 15-16, 01.09.2012, p. 1411-1415.Research output: Contribution to journal › Article
TY - JOUR
T1 - Hybrid photovoltaic devices based on the reduced graphene oxide-based polymer composite and n-type GaAs
AU - Zeng, Jian Jhou
AU - Tsai, Cheng Lung
AU - Lin, Yow-Jon
PY - 2012/9/1
Y1 - 2012/9/1
N2 - We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.
AB - We present a hybrid photovoltaic device based on n-type GaAs and poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) having the reduced graphene oxide (RGO). It is found that RGO doping may lead to increased dark conductivity. The improved of electrical conductivity is considered to mainly come from the carrier mobility enhancement. In addition, this n-type GaAs/RGO-doped PEDOT:PSS device shows good rectifying behavior with n of 1.8. The increased short circuit current of the n-type GaAs/PEDOT:PSS device was observed by RGO doping. The high photocurrent density originates from high-mobility hole transport combined with long-lifetime electron trapping in the RGO-doped PEDOT:PSS film.
UR - http://www.scopus.com/inward/record.url?scp=84863465373&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84863465373&partnerID=8YFLogxK
U2 - 10.1016/j.synthmet.2012.06.010
DO - 10.1016/j.synthmet.2012.06.010
M3 - Article
AN - SCOPUS:84863465373
VL - 162
SP - 1411
EP - 1415
JO - Synthetic Metals
JF - Synthetic Metals
SN - 0379-6779
IS - 15-16
ER -