Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition

Tae Eon Park, Joonki Suh, Dongjea Seo, Joonsuk Park, Der Yuh Lin, Ying Sheng Huang, Heon Jin Choi, Junqiao Wu, Chaun Jang, Joonyeon Chang

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Abstract

We report on temperature-dependent charge and magneto transport of chemically doped MoS2, p-type molybdenum disulfide degenerately doped with niobium (MoS2:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T-0.25, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS2:Nb on the insulating side of the M-I transition.

Original languageEnglish
Article number223107
JournalApplied Physics Letters
Volume107
Issue number22
DOIs
Publication statusPublished - 2015 Nov 30

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, T. E., Suh, J., Seo, D., Park, J., Lin, D. Y., Huang, Y. S., Choi, H. J., Wu, J., Jang, C., & Chang, J. (2015). Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition. Applied Physics Letters, 107(22), [223107]. https://doi.org/10.1063/1.4936571