Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition

Tae Eon Park, Joonki Suh, Dongjea Seo, Joonsuk Park, Der Yuh Lin, Ying Sheng Huang, Heon Jin Choi, Junqiao Wu, Chaun Jang, Joonyeon Chang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We report on temperature-dependent charge and magneto transport of chemically doped MoS2, p-type molybdenum disulfide degenerately doped with niobium (MoS2:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T-0.25, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS2:Nb on the insulating side of the M-I transition.

Original languageEnglish
Article number223107
JournalApplied Physics Letters
Volume107
Issue number22
DOIs
Publication statusPublished - 2015 Nov 30

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insulators
conduction
electrical resistivity
metals
molybdenum disulfides
magnetic fields
niobium
temperature dependence
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, Tae Eon ; Suh, Joonki ; Seo, Dongjea ; Park, Joonsuk ; Lin, Der Yuh ; Huang, Ying Sheng ; Choi, Heon Jin ; Wu, Junqiao ; Jang, Chaun ; Chang, Joonyeon. / Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition. In: Applied Physics Letters. 2015 ; Vol. 107, No. 22.
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abstract = "We report on temperature-dependent charge and magneto transport of chemically doped MoS2, p-type molybdenum disulfide degenerately doped with niobium (MoS2:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T-0.25, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20{\%} increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS2:Nb on the insulating side of the M-I transition.",
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Park, TE, Suh, J, Seo, D, Park, J, Lin, DY, Huang, YS, Choi, HJ, Wu, J, Jang, C & Chang, J 2015, 'Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition', Applied Physics Letters, vol. 107, no. 22, 223107. https://doi.org/10.1063/1.4936571

Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition. / Park, Tae Eon; Suh, Joonki; Seo, Dongjea; Park, Joonsuk; Lin, Der Yuh; Huang, Ying Sheng; Choi, Heon Jin; Wu, Junqiao; Jang, Chaun; Chang, Joonyeon.

In: Applied Physics Letters, Vol. 107, No. 22, 223107, 30.11.2015.

Research output: Contribution to journalArticle

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T1 - Hopping conduction in p -type MoS2 near the critical regime of the metal-insulator transition

AU - Park, Tae Eon

AU - Suh, Joonki

AU - Seo, Dongjea

AU - Park, Joonsuk

AU - Lin, Der Yuh

AU - Huang, Ying Sheng

AU - Choi, Heon Jin

AU - Wu, Junqiao

AU - Jang, Chaun

AU - Chang, Joonyeon

PY - 2015/11/30

Y1 - 2015/11/30

N2 - We report on temperature-dependent charge and magneto transport of chemically doped MoS2, p-type molybdenum disulfide degenerately doped with niobium (MoS2:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T-0.25, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS2:Nb on the insulating side of the M-I transition.

AB - We report on temperature-dependent charge and magneto transport of chemically doped MoS2, p-type molybdenum disulfide degenerately doped with niobium (MoS2:Nb). The temperature dependence of the electrical resistivity is characterized by a power law, ρ(T) ∼ T-0.25, which indicates that the system resides within the critical regime of the metal-insulator (M-I) transition. By applying high magnetic field (∼7 T), we observed a 20% increase in the resistivity at 2 K. The positive magnetoresistance shows that charge transport in this system is governed by the Mott-like three-dimensional variable range hopping (VRH) at low temperatures. According to relationship between magnetic-field and temperature dependencies of VRH resistivity, we extracted a characteristic localization length of 19.8 nm for MoS2:Nb on the insulating side of the M-I transition.

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