Hopping conduction behavior with the Coulomb effects in colossal magnetoresistance materials

C. H. Lin, S. L. Young, H. Z. Chen, M. C. Kao, Lance Horng

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on the temperature dependence of resistivity in La 0.7-xPrxMnO3 (x=0, 0.5, 0.7) bulk samples in order to explore the hopping transport behavior with the Coulomb effects for the colossal magnetoresistance materials. The experimental observations in La 0.7-xPrxPb0.3MnO3 (x=0.5, 0.7) bulk samples reveal the exponential temperature dependence of resistivity ρ(T)∞ [T1/T)n] with n = 1/2, when system was the paramagnetic (PM) insulator at the high temperature range (T>Tp). Evidence for the hopping conduction with Coulomb effects is presented By using the approximate method of the VRH conduction in the localization regime base on Efros and Shklovskii model [A. L. Efros and B. I. Shklovskii, J. Phys. C, Solid State Phys. 8, L49 (1975)], the localization length of eg electrons can be estimated with the relationship, ξ=2.8e2/ (4πε0κkBT1). The reasonable results of localization length can be evaluated to explain the possibility of the presence of the Coulomb interactions in these CMR materials.

Original languageEnglish
Pages (from-to)4415-4418
Number of pages4
JournalPhysica Status Solidi (B) Basic Research
Volume244
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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