Abstract
We report on the temperature dependence of resistivity in La 0.7-xPrxMnO3 (x=0, 0.5, 0.7) bulk samples in order to explore the hopping transport behavior with the Coulomb effects for the colossal magnetoresistance materials. The experimental observations in La 0.7-xPrxPb0.3MnO3 (x=0.5, 0.7) bulk samples reveal the exponential temperature dependence of resistivity ρ(T)∞ [T1/T)n] with n = 1/2, when system was the paramagnetic (PM) insulator at the high temperature range (T>Tp). Evidence for the hopping conduction with Coulomb effects is presented By using the approximate method of the VRH conduction in the localization regime base on Efros and Shklovskii model [A. L. Efros and B. I. Shklovskii, J. Phys. C, Solid State Phys. 8, L49 (1975)], the localization length of eg electrons can be estimated with the relationship, ξ=2.8e2/ (4πε0κkBT1). The reasonable results of localization length can be evaluated to explain the possibility of the presence of the Coulomb interactions in these CMR materials.
| Original language | English |
|---|---|
| Pages (from-to) | 4415-4418 |
| Number of pages | 4 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 244 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2007 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Hopping conduction behavior with the Coulomb effects in colossal magnetoresistance materials. / Lin, C. H.; Young, S. L.; Chen, H. Z.; Kao, M. C.; Horng, Lance.
In: Physica Status Solidi (B) Basic Research, Vol. 244, No. 12, 01.12.2007, p. 4415-4418.Research output: Contribution to journal › Article
TY - JOUR
T1 - Hopping conduction behavior with the Coulomb effects in colossal magnetoresistance materials
AU - Lin, C. H.
AU - Young, S. L.
AU - Chen, H. Z.
AU - Kao, M. C.
AU - Horng, Lance
PY - 2007/12/1
Y1 - 2007/12/1
N2 - We report on the temperature dependence of resistivity in La 0.7-xPrxMnO3 (x=0, 0.5, 0.7) bulk samples in order to explore the hopping transport behavior with the Coulomb effects for the colossal magnetoresistance materials. The experimental observations in La 0.7-xPrxPb0.3MnO3 (x=0.5, 0.7) bulk samples reveal the exponential temperature dependence of resistivity ρ(T)∞ [T1/T)n] with n = 1/2, when system was the paramagnetic (PM) insulator at the high temperature range (T>Tp). Evidence for the hopping conduction with Coulomb effects is presented By using the approximate method of the VRH conduction in the localization regime base on Efros and Shklovskii model [A. L. Efros and B. I. Shklovskii, J. Phys. C, Solid State Phys. 8, L49 (1975)], the localization length of eg electrons can be estimated with the relationship, ξ=2.8e2/ (4πε0κkBT1). The reasonable results of localization length can be evaluated to explain the possibility of the presence of the Coulomb interactions in these CMR materials.
AB - We report on the temperature dependence of resistivity in La 0.7-xPrxMnO3 (x=0, 0.5, 0.7) bulk samples in order to explore the hopping transport behavior with the Coulomb effects for the colossal magnetoresistance materials. The experimental observations in La 0.7-xPrxPb0.3MnO3 (x=0.5, 0.7) bulk samples reveal the exponential temperature dependence of resistivity ρ(T)∞ [T1/T)n] with n = 1/2, when system was the paramagnetic (PM) insulator at the high temperature range (T>Tp). Evidence for the hopping conduction with Coulomb effects is presented By using the approximate method of the VRH conduction in the localization regime base on Efros and Shklovskii model [A. L. Efros and B. I. Shklovskii, J. Phys. C, Solid State Phys. 8, L49 (1975)], the localization length of eg electrons can be estimated with the relationship, ξ=2.8e2/ (4πε0κkBT1). The reasonable results of localization length can be evaluated to explain the possibility of the presence of the Coulomb interactions in these CMR materials.
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U2 - 10.1002/pssb.200777337
DO - 10.1002/pssb.200777337
M3 - Article
AN - SCOPUS:38049125759
VL - 244
SP - 4415
EP - 4418
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 12
ER -