Hopping conduction behavior with the Coulomb effects in colossal magnetoresistance materials

C. H. Lin; S. L. Young; H. Z. Chen; M. C. Kao; Lance Horng

doi:10.1002/pssb.200777337

Hopping conduction behavior with the Coulomb effects in colossal magnetoresistance materials

C. H. Lin, S. L. Young, H. Z. Chen, M. C. Kao, Lance Horng

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We report on the temperature dependence of resistivity in La _0.7-xPr_xMnO₃ (x=0, 0.5, 0.7) bulk samples in order to explore the hopping transport behavior with the Coulomb effects for the colossal magnetoresistance materials. The experimental observations in La _0.7-xPr_xPb_0.3MnO₃ (x=0.5, 0.7) bulk samples reveal the exponential temperature dependence of resistivity ρ(T)∞ [T₁/T)ⁿ] with n = 1/2, when system was the paramagnetic (PM) insulator at the high temperature range (T>T_p). Evidence for the hopping conduction with Coulomb effects is presented By using the approximate method of the VRH conduction in the localization regime base on Efros and Shklovskii model [A. L. Efros and B. I. Shklovskii, J. Phys. C, Solid State Phys. 8, L49 (1975)], the localization length of e_g electrons can be estimated with the relationship, ξ=2.8e²/ (4πε₀κk_BT₁). The reasonable results of localization length can be evaluated to explain the possibility of the presence of the Coulomb interactions in these CMR materials.

Original language	English
Pages (from-to)	4415-4418
Number of pages	4
Journal	Physica Status Solidi (B) Basic Research
Volume	244
Issue number	12
DOIs	https://doi.org/10.1002/pssb.200777337
Publication status	Published - 2007 Dec 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Hopping conduction behavior with the Coulomb effects in colossal magnetoresistance materials",

abstract = "We report on the temperature dependence of resistivity in La 0.7-xPrxMnO3 (x=0, 0.5, 0.7) bulk samples in order to explore the hopping transport behavior with the Coulomb effects for the colossal magnetoresistance materials. The experimental observations in La 0.7-xPrxPb0.3MnO3 (x=0.5, 0.7) bulk samples reveal the exponential temperature dependence of resistivity ρ(T)∞ [T1/T)n] with n = 1/2, when system was the paramagnetic (PM) insulator at the high temperature range (T>Tp). Evidence for the hopping conduction with Coulomb effects is presented By using the approximate method of the VRH conduction in the localization regime base on Efros and Shklovskii model [A. L. Efros and B. I. Shklovskii, J. Phys. C, Solid State Phys. 8, L49 (1975)], the localization length of eg electrons can be estimated with the relationship, ξ=2.8e2/ (4πε0κkBT1). The reasonable results of localization length can be evaluated to explain the possibility of the presence of the Coulomb interactions in these CMR materials.",

author = "Lin, {C. H.} and Young, {S. L.} and Chen, {H. Z.} and Kao, {M. C.} and Lance Horng",

year = "2007",

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T1 - Hopping conduction behavior with the Coulomb effects in colossal magnetoresistance materials

AU - Lin, C. H.

AU - Young, S. L.

AU - Chen, H. Z.

AU - Kao, M. C.

AU - Horng, Lance

PY - 2007/12/1

Y1 - 2007/12/1

N2 - We report on the temperature dependence of resistivity in La 0.7-xPrxMnO3 (x=0, 0.5, 0.7) bulk samples in order to explore the hopping transport behavior with the Coulomb effects for the colossal magnetoresistance materials. The experimental observations in La 0.7-xPrxPb0.3MnO3 (x=0.5, 0.7) bulk samples reveal the exponential temperature dependence of resistivity ρ(T)∞ [T1/T)n] with n = 1/2, when system was the paramagnetic (PM) insulator at the high temperature range (T>Tp). Evidence for the hopping conduction with Coulomb effects is presented By using the approximate method of the VRH conduction in the localization regime base on Efros and Shklovskii model [A. L. Efros and B. I. Shklovskii, J. Phys. C, Solid State Phys. 8, L49 (1975)], the localization length of eg electrons can be estimated with the relationship, ξ=2.8e2/ (4πε0κkBT1). The reasonable results of localization length can be evaluated to explain the possibility of the presence of the Coulomb interactions in these CMR materials.

AB - We report on the temperature dependence of resistivity in La 0.7-xPrxMnO3 (x=0, 0.5, 0.7) bulk samples in order to explore the hopping transport behavior with the Coulomb effects for the colossal magnetoresistance materials. The experimental observations in La 0.7-xPrxPb0.3MnO3 (x=0.5, 0.7) bulk samples reveal the exponential temperature dependence of resistivity ρ(T)∞ [T1/T)n] with n = 1/2, when system was the paramagnetic (PM) insulator at the high temperature range (T>Tp). Evidence for the hopping conduction with Coulomb effects is presented By using the approximate method of the VRH conduction in the localization regime base on Efros and Shklovskii model [A. L. Efros and B. I. Shklovskii, J. Phys. C, Solid State Phys. 8, L49 (1975)], the localization length of eg electrons can be estimated with the relationship, ξ=2.8e2/ (4πε0κkBT1). The reasonable results of localization length can be evaluated to explain the possibility of the presence of the Coulomb interactions in these CMR materials.

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