Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer

Bing Cheng Lin, Kuo Ju Chen, Chao Hsun Wang, Ching Hsueh Chiu, Yu Pin Lan, Chien Chung Lin, Po Tsung Lee, Min Hsiung Shih, Yen-Kuang Kuo, Hao Chung Kuo

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

Original languageEnglish
Pages (from-to)463-469
Number of pages7
JournalOptics Express
Volume22
Issue number1
DOIs
Publication statusPublished - 2014 Jan 13

Fingerprint

light emitting diodes
injection
electrons
nitrides
metalorganic chemical vapor deposition
energy bands
diagrams
current density
aluminum
electric fields
profiles
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Lin, B. C., Chen, K. J., Wang, C. H., Chiu, C. H., Lan, Y. P., Lin, C. C., ... Kuo, H. C. (2014). Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer. Optics Express, 22(1), 463-469. https://doi.org/10.1364/OE.22.000463
Lin, Bing Cheng ; Chen, Kuo Ju ; Wang, Chao Hsun ; Chiu, Ching Hsueh ; Lan, Yu Pin ; Lin, Chien Chung ; Lee, Po Tsung ; Shih, Min Hsiung ; Kuo, Yen-Kuang ; Kuo, Hao Chung. / Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer. In: Optics Express. 2014 ; Vol. 22, No. 1. pp. 463-469.
@article{f167ffe0819b476183c9688d2c3aa348,
title = "Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer",
abstract = "A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29{\%} as compared with 44{\%} for original LED, which reflects the improvement in hole injection and electron overflow in our design.",
author = "Lin, {Bing Cheng} and Chen, {Kuo Ju} and Wang, {Chao Hsun} and Chiu, {Ching Hsueh} and Lan, {Yu Pin} and Lin, {Chien Chung} and Lee, {Po Tsung} and Shih, {Min Hsiung} and Yen-Kuang Kuo and Kuo, {Hao Chung}",
year = "2014",
month = "1",
day = "13",
doi = "10.1364/OE.22.000463",
language = "English",
volume = "22",
pages = "463--469",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "1",

}

Lin, BC, Chen, KJ, Wang, CH, Chiu, CH, Lan, YP, Lin, CC, Lee, PT, Shih, MH, Kuo, Y-K & Kuo, HC 2014, 'Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer', Optics Express, vol. 22, no. 1, pp. 463-469. https://doi.org/10.1364/OE.22.000463

Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer. / Lin, Bing Cheng; Chen, Kuo Ju; Wang, Chao Hsun; Chiu, Ching Hsueh; Lan, Yu Pin; Lin, Chien Chung; Lee, Po Tsung; Shih, Min Hsiung; Kuo, Yen-Kuang; Kuo, Hao Chung.

In: Optics Express, Vol. 22, No. 1, 13.01.2014, p. 463-469.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hole injection and electron overflow improvement in InGaN/GaN light-emitting diodes by a tapered AlGaN electron blocking layer

AU - Lin, Bing Cheng

AU - Chen, Kuo Ju

AU - Wang, Chao Hsun

AU - Chiu, Ching Hsueh

AU - Lan, Yu Pin

AU - Lin, Chien Chung

AU - Lee, Po Tsung

AU - Shih, Min Hsiung

AU - Kuo, Yen-Kuang

AU - Kuo, Hao Chung

PY - 2014/1/13

Y1 - 2014/1/13

N2 - A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

AB - A tapered AlGaN electron blocking layer with step-graded aluminum composition is analyzed in nitride-based blue light-emitting diode (LED) numerically and experimentally. The energy band diagrams, electrostatic fields, carrier concentration, electron current density profiles, and hole transmitting probability are investigated. The simulation results demonstrated that such tapered structure can effectively enhance the hole injection efficiency as well as the electron confinement. Consequently, the LED with a tapered EBL grown by metal-organic chemical vapor deposition exhibits reduced efficiency droop behavior of 29% as compared with 44% for original LED, which reflects the improvement in hole injection and electron overflow in our design.

UR - http://www.scopus.com/inward/record.url?scp=84892635577&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892635577&partnerID=8YFLogxK

U2 - 10.1364/OE.22.000463

DO - 10.1364/OE.22.000463

M3 - Article

VL - 22

SP - 463

EP - 469

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 1

ER -