Abstract
High ZT values of nanostructured Bi 2-xSb xTe 3 for energy conversion are fabricated by hydrothermal methods followed by cold-pressing and sintering in an evacuated and encapsulated ampoule. We show that the sample with a nominal composition of x = 1.55 exhibits a dimensionless figure of merit ZT = 1.65 at 290 K and 1.75 at 270 K with significant 60-70% improvement of that of the commercial state-of-the-art Bi 2Te 3 materials around room temperature. The significant ZT improvement arises from the much-reduced thermal conductivity. The low thermal conductivity is mainly due to the increased phonon scattering in the nanostructured materials.
| Original language | English |
|---|---|
| Pages (from-to) | 4825-4831 |
| Number of pages | 7 |
| Journal | Journal of Materials Chemistry |
| Volume | 22 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2012 Mar 21 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Chemistry
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High thermoelectric figure-of-merit in p-type nanostructured (Bi,Sb) 2Te 3 fabricated via hydrothermal synthesis and evacuated-and-encapsulated sintering. / Liu, Chia Jyi; Lai, Hsin Chang; Liu, Yen Liang; Chen, Liang Ru.
In: Journal of Materials Chemistry, Vol. 22, No. 11, 21.03.2012, p. 4825-4831.Research output: Contribution to journal › Article
TY - JOUR
T1 - High thermoelectric figure-of-merit in p-type nanostructured (Bi,Sb) 2Te 3 fabricated via hydrothermal synthesis and evacuated-and-encapsulated sintering
AU - Liu, Chia Jyi
AU - Lai, Hsin Chang
AU - Liu, Yen Liang
AU - Chen, Liang Ru
PY - 2012/3/21
Y1 - 2012/3/21
N2 - High ZT values of nanostructured Bi 2-xSb xTe 3 for energy conversion are fabricated by hydrothermal methods followed by cold-pressing and sintering in an evacuated and encapsulated ampoule. We show that the sample with a nominal composition of x = 1.55 exhibits a dimensionless figure of merit ZT = 1.65 at 290 K and 1.75 at 270 K with significant 60-70% improvement of that of the commercial state-of-the-art Bi 2Te 3 materials around room temperature. The significant ZT improvement arises from the much-reduced thermal conductivity. The low thermal conductivity is mainly due to the increased phonon scattering in the nanostructured materials.
AB - High ZT values of nanostructured Bi 2-xSb xTe 3 for energy conversion are fabricated by hydrothermal methods followed by cold-pressing and sintering in an evacuated and encapsulated ampoule. We show that the sample with a nominal composition of x = 1.55 exhibits a dimensionless figure of merit ZT = 1.65 at 290 K and 1.75 at 270 K with significant 60-70% improvement of that of the commercial state-of-the-art Bi 2Te 3 materials around room temperature. The significant ZT improvement arises from the much-reduced thermal conductivity. The low thermal conductivity is mainly due to the increased phonon scattering in the nanostructured materials.
UR - http://www.scopus.com/inward/record.url?scp=84863157457&partnerID=8YFLogxK
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U2 - 10.1039/c2jm15185e
DO - 10.1039/c2jm15185e
M3 - Article
AN - SCOPUS:84863157457
VL - 22
SP - 4825
EP - 4831
JO - Journal of Materials Chemistry
JF - Journal of Materials Chemistry
SN - 0959-9428
IS - 11
ER -