Abstract
This paper presents a high-speed low-voltage built-in current sensor. It mainly utilizes a bulk-driven current mirror as a current sensor to reduce the power supply voltage drop. Based on this technique, we develop an analytic and empirical model to design the built-in current sensor. Experimental results show that the bulk-driven built-in current sensor can have high speed and low area overhead under a low power supply voltage.
| Original language | English |
|---|---|
| Title of host publication | IEEE International Workshop on IDDQ Testing, Digest of Papers |
| Editors | Anon |
| Publisher | IEEE Comp Soc |
| Pages | 90-94 |
| Number of pages | 5 |
| Publication status | Published - 1997 Dec 1 |
| Event | Proceedings of the 1997 3rd IEEE International Workshop on IDDQ Testing - Washington, DC, USA Duration: 1997 Nov 5 → 1997 Nov 6 |
Other
| Other | Proceedings of the 1997 3rd IEEE International Workshop on IDDQ Testing |
|---|---|
| City | Washington, DC, USA |
| Period | 97-11-05 → 97-11-06 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Huang, T. C., Huang, M. C., & Lee, K. J. (1997). High-speed low-voltage built-in current sensor. In Anon (Ed.), IEEE International Workshop on IDDQ Testing, Digest of Papers (pp. 90-94). IEEE Comp Soc.