High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

Di Cheng Wu, You Wei Pan, Jenq Shinn Wu, Shih Wei Lin, Sheng Di Lin

Research output: Contribution to journalArticle


We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.

Original languageEnglish
Article number172403
JournalApplied Physics Letters
Issue number17
Publication statusPublished - 2016 Apr 25


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this