High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

Di Cheng Wu, You Wei Pan, Jenq-Shinn Wu, Shih Wei Lin, Sheng Di Lin

Research output: Contribution to journalArticle

Abstract

We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.

Original languageEnglish
Article number172403
JournalApplied Physics Letters
Volume108
Issue number17
DOIs
Publication statusPublished - 2016 Apr 25

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aluminum gallium arsenides
sensitivity
high electron mobility transistors
epitaxy
quantum wells
sensors
room temperature
configurations
metals
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate",
abstract = "We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3{\%} and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.",
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High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate. / Wu, Di Cheng; Pan, You Wei; Wu, Jenq-Shinn; Lin, Shih Wei; Lin, Sheng Di.

In: Applied Physics Letters, Vol. 108, No. 17, 172403, 25.04.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

AU - Wu, Di Cheng

AU - Pan, You Wei

AU - Wu, Jenq-Shinn

AU - Lin, Shih Wei

AU - Lin, Sheng Di

PY - 2016/4/25

Y1 - 2016/4/25

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