Abstract
We report on the formation of high-barrier Au contact to Si nanowires (SiNWs) with sulfide treatment. The discrepancy in Schottky barrier height (qφB) extracted from current-voltage (I-V) and capacitance-voltage (C-V) characteristics was studied. A high qφB of 1.03 eV is achieved between the 60 s-sulfide-treated SiNW surface and Au, which is confirmed by C-V measurements. For Au/SiNWs/n-type Si Schottky diodes, qφB determined from C-V measurements is higher than that determined from I-V measurements, owing to the image-force lowering and the larger ideality factor than 2. However, for Au/60 s-sulfide-treated SiNWs/n-type Si Schottky diodes, the lower qφB determined from I-V measurements than that determined from C-V measurements is attributed to a combined effect of the image-force lowering and the interfacial dipole. Note, a suitable sulfide treatment time is an important issue for producing high-quality Schottky diodes.
| Original language | English |
|---|---|
| Article number | 143710 |
| Journal | Journal of Applied Physics |
| Volume | 114 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2013 Oct 14 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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High Schottky barrier height of Au contact on Si-nanowire arrays with sulfide treatment. / Ruan, Cheng He; Lin, Yow-Jon.
In: Journal of Applied Physics, Vol. 114, No. 14, 143710, 14.10.2013.Research output: Contribution to journal › Article
TY - JOUR
T1 - High Schottky barrier height of Au contact on Si-nanowire arrays with sulfide treatment
AU - Ruan, Cheng He
AU - Lin, Yow-Jon
PY - 2013/10/14
Y1 - 2013/10/14
N2 - We report on the formation of high-barrier Au contact to Si nanowires (SiNWs) with sulfide treatment. The discrepancy in Schottky barrier height (qφB) extracted from current-voltage (I-V) and capacitance-voltage (C-V) characteristics was studied. A high qφB of 1.03 eV is achieved between the 60 s-sulfide-treated SiNW surface and Au, which is confirmed by C-V measurements. For Au/SiNWs/n-type Si Schottky diodes, qφB determined from C-V measurements is higher than that determined from I-V measurements, owing to the image-force lowering and the larger ideality factor than 2. However, for Au/60 s-sulfide-treated SiNWs/n-type Si Schottky diodes, the lower qφB determined from I-V measurements than that determined from C-V measurements is attributed to a combined effect of the image-force lowering and the interfacial dipole. Note, a suitable sulfide treatment time is an important issue for producing high-quality Schottky diodes.
AB - We report on the formation of high-barrier Au contact to Si nanowires (SiNWs) with sulfide treatment. The discrepancy in Schottky barrier height (qφB) extracted from current-voltage (I-V) and capacitance-voltage (C-V) characteristics was studied. A high qφB of 1.03 eV is achieved between the 60 s-sulfide-treated SiNW surface and Au, which is confirmed by C-V measurements. For Au/SiNWs/n-type Si Schottky diodes, qφB determined from C-V measurements is higher than that determined from I-V measurements, owing to the image-force lowering and the larger ideality factor than 2. However, for Au/60 s-sulfide-treated SiNWs/n-type Si Schottky diodes, the lower qφB determined from I-V measurements than that determined from C-V measurements is attributed to a combined effect of the image-force lowering and the interfacial dipole. Note, a suitable sulfide treatment time is an important issue for producing high-quality Schottky diodes.
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U2 - 10.1063/1.4825069
DO - 10.1063/1.4825069
M3 - Article
AN - SCOPUS:84886019155
VL - 114
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 14
M1 - 143710
ER -