High Schottky barrier height of Au contact on Si-nanowire arrays with sulfide treatment

Cheng He Ruan, Yow-Jon Lin

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report on the formation of high-barrier Au contact to Si nanowires (SiNWs) with sulfide treatment. The discrepancy in Schottky barrier height (qφB) extracted from current-voltage (I-V) and capacitance-voltage (C-V) characteristics was studied. A high qφB of 1.03 eV is achieved between the 60 s-sulfide-treated SiNW surface and Au, which is confirmed by C-V measurements. For Au/SiNWs/n-type Si Schottky diodes, qφB determined from C-V measurements is higher than that determined from I-V measurements, owing to the image-force lowering and the larger ideality factor than 2. However, for Au/60 s-sulfide-treated SiNWs/n-type Si Schottky diodes, the lower qφB determined from I-V measurements than that determined from C-V measurements is attributed to a combined effect of the image-force lowering and the interfacial dipole. Note, a suitable sulfide treatment time is an important issue for producing high-quality Schottky diodes.

Original languageEnglish
Article number143710
JournalJournal of Applied Physics
Volume114
Issue number14
DOIs
Publication statusPublished - 2013 Oct 14

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sulfides
electric contacts
nanowires
Schottky diodes
electrical measurement
capacitance
capacitance-voltage characteristics
dipoles
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "We report on the formation of high-barrier Au contact to Si nanowires (SiNWs) with sulfide treatment. The discrepancy in Schottky barrier height (qφB) extracted from current-voltage (I-V) and capacitance-voltage (C-V) characteristics was studied. A high qφB of 1.03 eV is achieved between the 60 s-sulfide-treated SiNW surface and Au, which is confirmed by C-V measurements. For Au/SiNWs/n-type Si Schottky diodes, qφB determined from C-V measurements is higher than that determined from I-V measurements, owing to the image-force lowering and the larger ideality factor than 2. However, for Au/60 s-sulfide-treated SiNWs/n-type Si Schottky diodes, the lower qφB determined from I-V measurements than that determined from C-V measurements is attributed to a combined effect of the image-force lowering and the interfacial dipole. Note, a suitable sulfide treatment time is an important issue for producing high-quality Schottky diodes.",
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High Schottky barrier height of Au contact on Si-nanowire arrays with sulfide treatment. / Ruan, Cheng He; Lin, Yow-Jon.

In: Journal of Applied Physics, Vol. 114, No. 14, 143710, 14.10.2013.

Research output: Contribution to journalArticle

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