High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Jun Rong Chen, Shih Chun Ling, Chin Tsang Hung, Tsung-Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23Ga0.77N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90% at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al0.23Ga0.77N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the emission spectrum of 34-pair AlN/Al0.23Ga0.77N DBR is broader than that of 20-pair AlN/Al0.23Ga0.77N DBR, which could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al0.23Ga0.77N DBR could still achieve 97% at 358 nm and the stop-band width is 16 nm.

Original languageEnglish
Pages (from-to)4871-4875
Number of pages5
JournalJournal of Crystal Growth
Volume310
Issue number23
DOIs
Publication statusPublished - 2008 Nov 15

Fingerprint

Distributed Bragg reflectors
Metallorganic chemical vapor deposition
Bragg reflectors
metalorganic chemical vapor deposition
reflectance
cracks
Cracks
bandwidth
Bandwidth
Aluminum Oxide
Sapphire
Optical microscopy
aluminum gallium nitride
Photoluminescence
sapphire
inhomogeneity
emission spectra
microscopy
photoluminescence
Crystals

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Chen, Jun Rong ; Ling, Shih Chun ; Hung, Chin Tsang ; Ko, Tsung-Shine ; Lu, Tien Chang ; Kuo, Hao Chung ; Wang, Shing Chung. / High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition. In: Journal of Crystal Growth. 2008 ; Vol. 310, No. 23. pp. 4871-4875.
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abstract = "High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23Ga0.77N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90{\%} at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al0.23Ga0.77N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the emission spectrum of 34-pair AlN/Al0.23Ga0.77N DBR is broader than that of 20-pair AlN/Al0.23Ga0.77N DBR, which could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al0.23Ga0.77N DBR could still achieve 97{\%} at 358 nm and the stop-band width is 16 nm.",
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High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition. / Chen, Jun Rong; Ling, Shih Chun; Hung, Chin Tsang; Ko, Tsung-Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.

In: Journal of Crystal Growth, Vol. 310, No. 23, 15.11.2008, p. 4871-4875.

Research output: Contribution to journalArticle

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T1 - High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

AU - Chen, Jun Rong

AU - Ling, Shih Chun

AU - Hung, Chin Tsang

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AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Wang, Shing Chung

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N2 - High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23Ga0.77N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90% at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al0.23Ga0.77N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the emission spectrum of 34-pair AlN/Al0.23Ga0.77N DBR is broader than that of 20-pair AlN/Al0.23Ga0.77N DBR, which could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al0.23Ga0.77N DBR could still achieve 97% at 358 nm and the stop-band width is 16 nm.

AB - High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23Ga0.77N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90% at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al0.23Ga0.77N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the emission spectrum of 34-pair AlN/Al0.23Ga0.77N DBR is broader than that of 20-pair AlN/Al0.23Ga0.77N DBR, which could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al0.23Ga0.77N DBR could still achieve 97% at 358 nm and the stop-band width is 16 nm.

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