Abstract
High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23Ga0.77N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90% at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al0.23Ga0.77N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the emission spectrum of 34-pair AlN/Al0.23Ga0.77N DBR is broader than that of 20-pair AlN/Al0.23Ga0.77N DBR, which could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al0.23Ga0.77N DBR could still achieve 97% at 358 nm and the stop-band width is 16 nm.
| Original language | English |
|---|---|
| Pages (from-to) | 4871-4875 |
| Number of pages | 5 |
| Journal | Journal of Crystal Growth |
| Volume | 310 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 2008 Nov 15 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry
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High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition. / Chen, Jun Rong; Ling, Shih Chun; Hung, Chin Tsang; Ko, Tsung-Shine; Lu, Tien Chang; Kuo, Hao Chung; Wang, Shing Chung.
In: Journal of Crystal Growth, Vol. 310, No. 23, 15.11.2008, p. 4871-4875.Research output: Contribution to journal › Article
TY - JOUR
T1 - High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
AU - Chen, Jun Rong
AU - Ling, Shih Chun
AU - Hung, Chin Tsang
AU - Ko, Tsung-Shine
AU - Lu, Tien Chang
AU - Kuo, Hao Chung
AU - Wang, Shing Chung
PY - 2008/11/15
Y1 - 2008/11/15
N2 - High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23Ga0.77N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90% at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al0.23Ga0.77N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the emission spectrum of 34-pair AlN/Al0.23Ga0.77N DBR is broader than that of 20-pair AlN/Al0.23Ga0.77N DBR, which could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al0.23Ga0.77N DBR could still achieve 97% at 358 nm and the stop-band width is 16 nm.
AB - High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23Ga0.77N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90% at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al0.23Ga0.77N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the emission spectrum of 34-pair AlN/Al0.23Ga0.77N DBR is broader than that of 20-pair AlN/Al0.23Ga0.77N DBR, which could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al0.23Ga0.77N DBR could still achieve 97% at 358 nm and the stop-band width is 16 nm.
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U2 - 10.1016/j.jcrysgro.2008.08.025
DO - 10.1016/j.jcrysgro.2008.08.025
M3 - Article
VL - 310
SP - 4871
EP - 4875
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 23
ER -