TY - JOUR
T1 - High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition
AU - Chen, Jun Rong
AU - Ling, Shih Chun
AU - Hung, Chin Tsang
AU - Ko, Tsung Shine
AU - Lu, Tien Chang
AU - Kuo, Hao Chung
AU - Wang, Shing Chung
PY - 2008/11/15
Y1 - 2008/11/15
N2 - High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23Ga0.77N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90% at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al0.23Ga0.77N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the emission spectrum of 34-pair AlN/Al0.23Ga0.77N DBR is broader than that of 20-pair AlN/Al0.23Ga0.77N DBR, which could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al0.23Ga0.77N DBR could still achieve 97% at 358 nm and the stop-band width is 16 nm.
AB - High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23Ga0.77N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90% at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al0.23Ga0.77N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the emission spectrum of 34-pair AlN/Al0.23Ga0.77N DBR is broader than that of 20-pair AlN/Al0.23Ga0.77N DBR, which could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al0.23Ga0.77N DBR could still achieve 97% at 358 nm and the stop-band width is 16 nm.
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U2 - 10.1016/j.jcrysgro.2008.08.025
DO - 10.1016/j.jcrysgro.2008.08.025
M3 - Article
AN - SCOPUS:56249103076
VL - 310
SP - 4871
EP - 4875
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 23
ER -