High-reflectivity ultraviolet AlN/AlGaN distributed Bragg reflectors grown by metalorganic chemical vapor deposition

Jun Rong Chen, Shih Chun Ling, Chin Tsang Hung, Tsung Shine Ko, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

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High-reflectivity ultraviolet distributed Bragg reflectors (DBRs), based on AlN/AlGaN quarter-wave layers, have been designed and grown on 2 in (0 0 0 1) sapphire substrates by metalorganic chemical vapor deposition. The growth of 20-pair AlN/Al0.23Ga0.77N DBR shows no observable cracks in the structure and achieves peak reflectivity of 90% at 367 nm together with a stop-band width of 24 nm. Furthermore, the growth of 34-pair AlN/Al0.23Ga0.77N DBR shows partial cracks from optical microscopy images. According to the room-temperature photoluminescence measurement, the emission spectrum of 34-pair AlN/Al0.23Ga0.77N DBR is broader than that of 20-pair AlN/Al0.23Ga0.77N DBR, which could be due to strain inhomogeneity generated by cracks. Despite the crystal quality problem, the peak reflectivity of 34-pair AlN/Al0.23Ga0.77N DBR could still achieve 97% at 358 nm and the stop-band width is 16 nm.

Original languageEnglish
Pages (from-to)4871-4875
Number of pages5
JournalJournal of Crystal Growth
Issue number23
Publication statusPublished - 2008 Nov 15


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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