High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures

K. H. Chang, Jenq-Shinn Wu, D. G. Liu, D. C. Liou, C. P. Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.

Original languageEnglish
Pages (from-to)11-15
Number of pages5
JournalJournal of Materials Science: Materials in Electronics
Volume3
Issue number1
DOIs
Publication statusPublished - 1992 Mar 1

Fingerprint

Molecular beam epitaxy
aluminum gallium arsenides
molecular beam epitaxy
phytotrons
resonant tunneling diodes
Linewidth
threshold currents
Temperature
valleys
Doping (additives)
indium
Resonant tunneling diodes
Indium
photoluminescence
Growth temperature
temperature
Heterojunctions
Photoluminescence
lasers
Lasers

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{2fcb9151e640418d9b86581d9fafa388,
title = "High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures",
abstract = "Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.",
author = "Chang, {K. H.} and Jenq-Shinn Wu and Liu, {D. G.} and Liou, {D. C.} and Lee, {C. P.}",
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High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures. / Chang, K. H.; Wu, Jenq-Shinn; Liu, D. G.; Liou, D. C.; Lee, C. P.

In: Journal of Materials Science: Materials in Electronics, Vol. 3, No. 1, 01.03.1992, p. 11-15.

Research output: Contribution to journalArticle

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T1 - High quality AlGaAs layers grown by molecular beam epitaxy at low temperatures

AU - Chang, K. H.

AU - Wu, Jenq-Shinn

AU - Liu, D. G.

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AU - Lee, C. P.

PY - 1992/3/1

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N2 - Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.

AB - Low-temperature (∼600 °C) molecular beam epitaxy (MBE) growth of AlGaAs has been studied. It was found that the quality of AlGaAs grown at low temperatures can be as good as that grown at high temperatures (>700 °C) if the source materials and the growth chamber are very clean. The threshold currents of Al0.6Ga0.4As/Al0.15Ga0.85As/Al0.6Ga0.4As double heterostructure (DH) lasers grown at low temperatures and high temperatures are almost the same. The material quality can be further improved with a proper amount of indium doping. Photoluminescence (PL) linewidths of 3.1 meV and 1.7 meV have been measured for Indoped Al0.42Ga0.58As and Al0.18Ga0.82As at 4 K, respectively. They are the narrowest linewidths for the MBE-grown AlGaAs with comparable Al contents at any growth temperature. With a proper amount of In doping, double-barrier resonant tunnelling diodes have also shown improved peak-to-valley current ratios.

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