High performances of InGaP/GaAs MSM photodetectors using Cu/Au Schottky contact

Chang Da Tsai, Yow-Jon Lin, Day Shan Liu, Ching Ting Lee

Research output: Contribution to journalConference article

Abstract

We present the high performance of InGaP/GaAs metal-semiconductor-metal photodetectors (MSM-PDs) using copper as the interdigital Schottky electrodes. The devices exhibit ultra-low dark current (70 pA at bias of 10 V) and ultra-fast pulse response (over 9 GHz). The notable dark current characteristic and the absence of trap-induced gain are accredited to the superior properties of InGaP capping layer. The superior performances of InGaP/GaAs MSM-PDs make it promising for data communication.

Original languageEnglish
Pages (from-to)724-731
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4078
Publication statusPublished - 2000 Jan 1
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 2000 Jul 262000 Jul 28

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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