High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications

Yeong Lin Lai, Edward Y. Chang, Chun Yen Chang, T. H. Liu, S. P. Wang

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

A high-performance pseudomorphic high electron mobility transistor (HEMT) with high output power density and high power-added efficiency for low-voltage wireless communication applications has been developed. This paper describes the dc and microwave performance of the pseudomorphic AlGaAs/InGaAs HEMT developed. The 1 um gate-length HEMT exhibited a maximum drain current of 470 mA/mm at Vgs = +1.0 V. The maximum transconductance of the device was 280 mS/mm. At a drain bias of 3.0 V and a measurement frequency of 900 MHz, the 2 mm-wide HEMT demonstrated an output power of 26.1 dBm (a power density of 204 mW/mm) and a power-added efficiency of 65% under the class AB condition while an output power of 26.7 dBm (234 mW/mm) and a power-added efficiency of 60% were obtained under the class A condition. The developed pseudomorphic power HEMT developed achieves the highest output power density ever reported among the GaAs devices operating at 3.0 V.

Original languageEnglish
Pages225-228
Number of pages4
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia
Duration: 1996 Nov 261996 Nov 28

Other

OtherProceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE
CityPenang, Malaysia
Period96-11-2696-11-28

Fingerprint

High electron mobility transistors
Communication
Electric potential
Gates (transistor)
Drain current
Transconductance
Microwaves
Power HEMT

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lai, Y. L., Chang, E. Y., Chang, C. Y., Liu, T. H., & Wang, S. P. (1997). High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications. 225-228. Paper presented at Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, .
Lai, Yeong Lin ; Chang, Edward Y. ; Chang, Chun Yen ; Liu, T. H. ; Wang, S. P. / High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications. Paper presented at Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, .4 p.
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Lai, YL, Chang, EY, Chang, CY, Liu, TH & Wang, SP 1997, 'High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications', Paper presented at Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, 96-11-26 - 96-11-28 pp. 225-228.

High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications. / Lai, Yeong Lin; Chang, Edward Y.; Chang, Chun Yen; Liu, T. H.; Wang, S. P.

1997. 225-228 Paper presented at Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, .

Research output: Contribution to conferencePaper

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AU - Lai, Yeong Lin

AU - Chang, Edward Y.

AU - Chang, Chun Yen

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AU - Wang, S. P.

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N2 - A high-performance pseudomorphic high electron mobility transistor (HEMT) with high output power density and high power-added efficiency for low-voltage wireless communication applications has been developed. This paper describes the dc and microwave performance of the pseudomorphic AlGaAs/InGaAs HEMT developed. The 1 um gate-length HEMT exhibited a maximum drain current of 470 mA/mm at Vgs = +1.0 V. The maximum transconductance of the device was 280 mS/mm. At a drain bias of 3.0 V and a measurement frequency of 900 MHz, the 2 mm-wide HEMT demonstrated an output power of 26.1 dBm (a power density of 204 mW/mm) and a power-added efficiency of 65% under the class AB condition while an output power of 26.7 dBm (234 mW/mm) and a power-added efficiency of 60% were obtained under the class A condition. The developed pseudomorphic power HEMT developed achieves the highest output power density ever reported among the GaAs devices operating at 3.0 V.

AB - A high-performance pseudomorphic high electron mobility transistor (HEMT) with high output power density and high power-added efficiency for low-voltage wireless communication applications has been developed. This paper describes the dc and microwave performance of the pseudomorphic AlGaAs/InGaAs HEMT developed. The 1 um gate-length HEMT exhibited a maximum drain current of 470 mA/mm at Vgs = +1.0 V. The maximum transconductance of the device was 280 mS/mm. At a drain bias of 3.0 V and a measurement frequency of 900 MHz, the 2 mm-wide HEMT demonstrated an output power of 26.1 dBm (a power density of 204 mW/mm) and a power-added efficiency of 65% under the class AB condition while an output power of 26.7 dBm (234 mW/mm) and a power-added efficiency of 60% were obtained under the class A condition. The developed pseudomorphic power HEMT developed achieves the highest output power density ever reported among the GaAs devices operating at 3.0 V.

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Lai YL, Chang EY, Chang CY, Liu TH, Wang SP. High-performance pseudomorphic power HEMTs for low-voltage wireless communication applications. 1997. Paper presented at Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE, Penang, Malaysia, .