A high-performance pseudomorphic high electron mobility transistor (HEMT) with high output power density and high power-added efficiency for low-voltage wireless communication applications has been developed. This paper describes the dc and microwave performance of the pseudomorphic AlGaAs/InGaAs HEMT developed. The 1 um gate-length HEMT exhibited a maximum drain current of 470 mA/mm at Vgs = +1.0 V. The maximum transconductance of the device was 280 mS/mm. At a drain bias of 3.0 V and a measurement frequency of 900 MHz, the 2 mm-wide HEMT demonstrated an output power of 26.1 dBm (a power density of 204 mW/mm) and a power-added efficiency of 65% under the class AB condition while an output power of 26.7 dBm (234 mW/mm) and a power-added efficiency of 60% were obtained under the class A condition. The developed pseudomorphic power HEMT developed achieves the highest output power density ever reported among the GaAs devices operating at 3.0 V.
|Number of pages||4|
|Publication status||Published - 1997 Jan 1|
|Event||Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE - Penang, Malaysia|
Duration: 1996 Nov 26 → 1996 Nov 28
|Other||Proceedings of the 1996 IEEE International Conference on Semiconductor Electronics, ICSE|
|Period||96-11-26 → 96-11-28|
All Science Journal Classification (ASJC) codes