High performance phototransistors based on single crystalline perylene-tetracarboxylic-dianhydride nanoparticle

Linh Nam Nguyen, Sunil Kumar Pradhan, Chia Nan Yen, Ming Chou Lin, Chien Han Chen, Cen Shawn Wu, Kuei Shu Chang-Liao, Minn Tsong Lin, Chii Dong Chen

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Organic semiconducting devices suffer from grain boundary scattering, which can be responsible for low mobility and even mask intrinsic transport properties. In this letter, we show that devices containing only single grains give electron mobility 2-3 orders higher than that of conventional film-structured polycrystalline organic semiconductor transistors. The devices contain single perylene-tetracarboxylic-dianhydride nanoparticles embedded inside gated-nanopore structures. Since there is no inter-grain scattering, we obtain the highest reported electron mobility values of 0.08 cm2/Vs at 300 K and 0.5 cm2/Vs at 80 K. Consequently, the devices, when illuminated with ultraviolet, also yield a previously unrecorded high value of external quantum efficiency of 3.5 × 106.

Original languageEnglish
Article number183301
JournalApplied Physics Letters
Volume103
Issue number18
DOIs
Publication statusPublished - 2013 Oct 28

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Nguyen, L. N., Kumar Pradhan, S., Yen, C. N., Lin, M. C., Chen, C. H., Wu, C. S., Chang-Liao, K. S., Lin, M. T., & Chen, C. D. (2013). High performance phototransistors based on single crystalline perylene-tetracarboxylic-dianhydride nanoparticle. Applied Physics Letters, 103(18), [183301]. https://doi.org/10.1063/1.4827975