High performance InGaAsP lasers fabricated by ion-implantation induced quantum well intermixing

Yen Ting Pan, San Liang Lee, Der Yuh Lin, Jiun De Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrate high-performance InGaAsP based multiple-quantum-well (MQW) lasers fabricated by low-energy ion implantation induced quantum well intermixing (QWI) technique. Different doses of implantation were used to vary the wavelength shift for MQW lasers from the QWI process. At room temperature, the QWI lasers have continuous-wave (CW) characteristics of 10.4-mA threshold current and 13.8-mW maximal output power, which are comparable to the performance of the lasers made of the same as-grown MQW materials. The QWI lasers have a characteristic temperature as high as 58.4 K, which verifies that the material quality after intermixing is feasible for fabricating practical devices.

Original languageEnglish
Pages (from-to)901-907
Number of pages7
JournalIEICE Electronics Express
Volume5
Issue number21
DOIs
Publication statusPublished - 2008 Nov 10

Fingerprint

quantum well lasers
Quantum well lasers
Ion implantation
Semiconductor quantum wells
ion implantation
quantum wells
Lasers
lasers
threshold currents
continuous radiation
implantation
Dosimetry
dosage
output
shift
room temperature
Wavelength
Temperature
wavelengths
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Pan, Yen Ting ; Lee, San Liang ; Lin, Der Yuh ; Wu, Jiun De. / High performance InGaAsP lasers fabricated by ion-implantation induced quantum well intermixing. In: IEICE Electronics Express. 2008 ; Vol. 5, No. 21. pp. 901-907.
@article{50951b1c01134f0287f5933c604a75e9,
title = "High performance InGaAsP lasers fabricated by ion-implantation induced quantum well intermixing",
abstract = "We demonstrate high-performance InGaAsP based multiple-quantum-well (MQW) lasers fabricated by low-energy ion implantation induced quantum well intermixing (QWI) technique. Different doses of implantation were used to vary the wavelength shift for MQW lasers from the QWI process. At room temperature, the QWI lasers have continuous-wave (CW) characteristics of 10.4-mA threshold current and 13.8-mW maximal output power, which are comparable to the performance of the lasers made of the same as-grown MQW materials. The QWI lasers have a characteristic temperature as high as 58.4 K, which verifies that the material quality after intermixing is feasible for fabricating practical devices.",
author = "Pan, {Yen Ting} and Lee, {San Liang} and Lin, {Der Yuh} and Wu, {Jiun De}",
year = "2008",
month = "11",
day = "10",
doi = "10.1587/elex.5.901",
language = "English",
volume = "5",
pages = "901--907",
journal = "IEICE Electronics Express",
issn = "1349-2543",
publisher = "The Institute of Electronics, Information and Communication Engineers (IEICE)",
number = "21",

}

High performance InGaAsP lasers fabricated by ion-implantation induced quantum well intermixing. / Pan, Yen Ting; Lee, San Liang; Lin, Der Yuh; Wu, Jiun De.

In: IEICE Electronics Express, Vol. 5, No. 21, 10.11.2008, p. 901-907.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High performance InGaAsP lasers fabricated by ion-implantation induced quantum well intermixing

AU - Pan, Yen Ting

AU - Lee, San Liang

AU - Lin, Der Yuh

AU - Wu, Jiun De

PY - 2008/11/10

Y1 - 2008/11/10

N2 - We demonstrate high-performance InGaAsP based multiple-quantum-well (MQW) lasers fabricated by low-energy ion implantation induced quantum well intermixing (QWI) technique. Different doses of implantation were used to vary the wavelength shift for MQW lasers from the QWI process. At room temperature, the QWI lasers have continuous-wave (CW) characteristics of 10.4-mA threshold current and 13.8-mW maximal output power, which are comparable to the performance of the lasers made of the same as-grown MQW materials. The QWI lasers have a characteristic temperature as high as 58.4 K, which verifies that the material quality after intermixing is feasible for fabricating practical devices.

AB - We demonstrate high-performance InGaAsP based multiple-quantum-well (MQW) lasers fabricated by low-energy ion implantation induced quantum well intermixing (QWI) technique. Different doses of implantation were used to vary the wavelength shift for MQW lasers from the QWI process. At room temperature, the QWI lasers have continuous-wave (CW) characteristics of 10.4-mA threshold current and 13.8-mW maximal output power, which are comparable to the performance of the lasers made of the same as-grown MQW materials. The QWI lasers have a characteristic temperature as high as 58.4 K, which verifies that the material quality after intermixing is feasible for fabricating practical devices.

UR - http://www.scopus.com/inward/record.url?scp=56749173344&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=56749173344&partnerID=8YFLogxK

U2 - 10.1587/elex.5.901

DO - 10.1587/elex.5.901

M3 - Article

AN - SCOPUS:56749173344

VL - 5

SP - 901

EP - 907

JO - IEICE Electronics Express

JF - IEICE Electronics Express

SN - 1349-2543

IS - 21

ER -