High performance InGaAsP lasers fabricated by ion-implantation induced quantum well intermixing

Yen Ting Pan, San Liang Lee, Der Yuh Lin, Jiun De Wu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We demonstrate high-performance InGaAsP based multiple-quantum-well (MQW) lasers fabricated by low-energy ion implantation induced quantum well intermixing (QWI) technique. Different doses of implantation were used to vary the wavelength shift for MQW lasers from the QWI process. At room temperature, the QWI lasers have continuous-wave (CW) characteristics of 10.4-mA threshold current and 13.8-mW maximal output power, which are comparable to the performance of the lasers made of the same as-grown MQW materials. The QWI lasers have a characteristic temperature as high as 58.4 K, which verifies that the material quality after intermixing is feasible for fabricating practical devices.

Original languageEnglish
Pages (from-to)901-907
Number of pages7
JournalIEICE Electronics Express
Volume5
Issue number21
DOIs
Publication statusPublished - 2008 Nov 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High performance InGaAsP lasers fabricated by ion-implantation induced quantum well intermixing'. Together they form a unique fingerprint.

  • Cite this