High-performance Au/Ti/Ge/Pd ohmic contacts on n-type In0.5Ga0.5P

Chun Yi Chai, Janne Wha Wu, Jan Dar Guo, Jung A. Huang, Yeong-Lin Lai, Shih Hsiung Chan, Chun Yen Chang, Yi Jen Chan, Huang Chung Cheng

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

High-performance Au/Ti/Ge/Pd ohmic contacts on n+-In0.5Ga0.5P have been fabricated for the first time. Using an n+-In0.5Ga0.5P epitaxial layer grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with a Si dopant concentration of about 2 × 1018 cm-3, the minimum specific contact resistivity is as low as 1.2 × 10-5 Ω·cm2, which is much lower than that of AuGeNi contacts after rapid thermal annealing at 400°C for 60 s. The thermal stability of the Au/Ti/Ge/Pd system is significantly higher than that of conventional AuGeNi due to the introduction of the Ti barrier layer. Many holes and islands are observed on the surfaces of samples annealed at high temperature. The outdiffusion of P from the decomposed In0.5Ga0.5P substrate and agglomeration of Pd and Ge are the primary causes of contact degradation.

Original languageEnglish
Pages (from-to)2073-2076
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number4 A
Publication statusPublished - 1996 Apr 1

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Low pressure chemical vapor deposition
Ohmic contacts
Rapid thermal annealing
Epitaxial layers
Metallorganic chemical vapor deposition
electric contacts
Thermodynamic stability
Agglomeration
Doping (additives)
Degradation
Substrates
barrier layers
agglomeration
metalorganic chemical vapor deposition
thermal stability
low pressure
degradation
Temperature
electrical resistivity
annealing

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chai, Chun Yi ; Wu, Janne Wha ; Guo, Jan Dar ; Huang, Jung A. ; Lai, Yeong-Lin ; Chan, Shih Hsiung ; Chang, Chun Yen ; Chan, Yi Jen ; Cheng, Huang Chung. / High-performance Au/Ti/Ge/Pd ohmic contacts on n-type In0.5Ga0.5P. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1996 ; Vol. 35, No. 4 A. pp. 2073-2076.
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title = "High-performance Au/Ti/Ge/Pd ohmic contacts on n-type In0.5Ga0.5P",
abstract = "High-performance Au/Ti/Ge/Pd ohmic contacts on n+-In0.5Ga0.5P have been fabricated for the first time. Using an n+-In0.5Ga0.5P epitaxial layer grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with a Si dopant concentration of about 2 × 1018 cm-3, the minimum specific contact resistivity is as low as 1.2 × 10-5 Ω·cm2, which is much lower than that of AuGeNi contacts after rapid thermal annealing at 400°C for 60 s. The thermal stability of the Au/Ti/Ge/Pd system is significantly higher than that of conventional AuGeNi due to the introduction of the Ti barrier layer. Many holes and islands are observed on the surfaces of samples annealed at high temperature. The outdiffusion of P from the decomposed In0.5Ga0.5P substrate and agglomeration of Pd and Ge are the primary causes of contact degradation.",
author = "Chai, {Chun Yi} and Wu, {Janne Wha} and Guo, {Jan Dar} and Huang, {Jung A.} and Yeong-Lin Lai and Chan, {Shih Hsiung} and Chang, {Chun Yen} and Chan, {Yi Jen} and Cheng, {Huang Chung}",
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Chai, CY, Wu, JW, Guo, JD, Huang, JA, Lai, Y-L, Chan, SH, Chang, CY, Chan, YJ & Cheng, HC 1996, 'High-performance Au/Ti/Ge/Pd ohmic contacts on n-type In0.5Ga0.5P', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 35, no. 4 A, pp. 2073-2076.

High-performance Au/Ti/Ge/Pd ohmic contacts on n-type In0.5Ga0.5P. / Chai, Chun Yi; Wu, Janne Wha; Guo, Jan Dar; Huang, Jung A.; Lai, Yeong-Lin; Chan, Shih Hsiung; Chang, Chun Yen; Chan, Yi Jen; Cheng, Huang Chung.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 4 A, 01.04.1996, p. 2073-2076.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-performance Au/Ti/Ge/Pd ohmic contacts on n-type In0.5Ga0.5P

AU - Chai, Chun Yi

AU - Wu, Janne Wha

AU - Guo, Jan Dar

AU - Huang, Jung A.

AU - Lai, Yeong-Lin

AU - Chan, Shih Hsiung

AU - Chang, Chun Yen

AU - Chan, Yi Jen

AU - Cheng, Huang Chung

PY - 1996/4/1

Y1 - 1996/4/1

N2 - High-performance Au/Ti/Ge/Pd ohmic contacts on n+-In0.5Ga0.5P have been fabricated for the first time. Using an n+-In0.5Ga0.5P epitaxial layer grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with a Si dopant concentration of about 2 × 1018 cm-3, the minimum specific contact resistivity is as low as 1.2 × 10-5 Ω·cm2, which is much lower than that of AuGeNi contacts after rapid thermal annealing at 400°C for 60 s. The thermal stability of the Au/Ti/Ge/Pd system is significantly higher than that of conventional AuGeNi due to the introduction of the Ti barrier layer. Many holes and islands are observed on the surfaces of samples annealed at high temperature. The outdiffusion of P from the decomposed In0.5Ga0.5P substrate and agglomeration of Pd and Ge are the primary causes of contact degradation.

AB - High-performance Au/Ti/Ge/Pd ohmic contacts on n+-In0.5Ga0.5P have been fabricated for the first time. Using an n+-In0.5Ga0.5P epitaxial layer grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with a Si dopant concentration of about 2 × 1018 cm-3, the minimum specific contact resistivity is as low as 1.2 × 10-5 Ω·cm2, which is much lower than that of AuGeNi contacts after rapid thermal annealing at 400°C for 60 s. The thermal stability of the Au/Ti/Ge/Pd system is significantly higher than that of conventional AuGeNi due to the introduction of the Ti barrier layer. Many holes and islands are observed on the surfaces of samples annealed at high temperature. The outdiffusion of P from the decomposed In0.5Ga0.5P substrate and agglomeration of Pd and Ge are the primary causes of contact degradation.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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