High field effect of a new tip type CMOS MEMS gas sensor

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A new proposed gas sensor was built to achieve high field with the tip type electrode in a standard CMOS process. The increase of electric field will enhance the chemical reaction rate dramatically. Beyond the conventional chemical sensors with heating power to achieve a high sensitivity, we proposed a total new sensing mechanism with the short distance of electrodes which includes the different distance between electrodes with even higher sensitivity than before without any heating. To form the sensing material SnO2, we first formed the material Fe3O4 with 0.86g FeCl 2 + 1.4g FeCl3 using in 40ml H2O at 80°C, and SnO2 solution is mixed at SnO2:Fe3O 4 = 3:1. After the micromachining of CMOS gas sensor, a spin-on of sensing material and the subsequent process of wire-bond were performed. The samples with several electric fields were under test and verified inside a CO gas chamber with the tip type electrode. With careful investigation of measurement results, it shows the proposed configuration with tip electrode sensor reaches the higher sensitivity with the higher electric field, while the normalized sensitivity rises from 107.6 %/ppm to 388 %/ppm under the applied electric field from 1.67 V/μm to 8.33 V/μm. Experimental measurement shows the research is available for CO sensor with high sensitivity under high electric field.

Original languageEnglish
Title of host publicationIEEE SENSORS 2012 - Proceedings
DOIs
Publication statusPublished - 2012 Dec 1
Event11th IEEE SENSORS 2012 Conference - Taipei, Taiwan
Duration: 2012 Oct 282012 Oct 31

Publication series

NameProceedings of IEEE Sensors

Other

Other11th IEEE SENSORS 2012 Conference
CountryTaiwan
CityTaipei
Period12-10-2812-10-31

Fingerprint

Chemical sensors
MEMS
Electric fields
Electrodes
Heating
Sensors
Micromachining
Reaction rates
Chemical reactions
Wire
Gases

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Liu, Z. H., Shen, C-H., & Chen, S. J. (2012). High field effect of a new tip type CMOS MEMS gas sensor. In IEEE SENSORS 2012 - Proceedings [6411483] (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2012.6411483
Liu, Zong Han ; Shen, Chih-Hsiung ; Chen, Shu Jung. / High field effect of a new tip type CMOS MEMS gas sensor. IEEE SENSORS 2012 - Proceedings. 2012. (Proceedings of IEEE Sensors).
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Liu, ZH, Shen, C-H & Chen, SJ 2012, High field effect of a new tip type CMOS MEMS gas sensor. in IEEE SENSORS 2012 - Proceedings., 6411483, Proceedings of IEEE Sensors, 11th IEEE SENSORS 2012 Conference, Taipei, Taiwan, 12-10-28. https://doi.org/10.1109/ICSENS.2012.6411483

High field effect of a new tip type CMOS MEMS gas sensor. / Liu, Zong Han; Shen, Chih-Hsiung; Chen, Shu Jung.

IEEE SENSORS 2012 - Proceedings. 2012. 6411483 (Proceedings of IEEE Sensors).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Liu ZH, Shen C-H, Chen SJ. High field effect of a new tip type CMOS MEMS gas sensor. In IEEE SENSORS 2012 - Proceedings. 2012. 6411483. (Proceedings of IEEE Sensors). https://doi.org/10.1109/ICSENS.2012.6411483