Abstract
In this research nanoporous structures on p -type GaN:Mg and n -type GaN:Si surfaces were fabricated through a photoelectrochemical (PEC) oxidation and an oxide-removing process. The photoluminescence (PL) intensities of GaN and InGaNGaN multi-quantum-well (MQW) structures were enhanced by forming this nanoporous structure to increase light extraction efficiency. The PL emission peaks of an MQW active layer have a blueshift phenomenon from 465.5 nm (standard) to 456.0 nm (nanoporous) measured at 300 K which was caused by partially releasing the compressive strain from the top GaN:Mg layers. The internal quantum efficiency could be increased by a partial strain release that induces a lower piezoelectric field in the active layer. The thermal activation energy of a nanoporous structure (85 meV) is higher than the standard one (33 meV) from a temperature dependent PL measurement. The internal quantum efficiency and light extraction efficiency of an InGaNGaN MQW active layer are significantly enhanced by this nanoporous GaN:Mg surface, and this PEC treated nanoporous structure is suitable for high-power lighting applications.
| Original language | English |
|---|---|
| Article number | 083121 |
| Journal | Applied Physics Letters |
| Volume | 88 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2006 Mar 3 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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High-efficiency InGaN -based light-emitting diodes with nanoporous GaN:Mg structure. / Lin, Chia Feng; Zheng, Jing Hui; Yang, Zhong Jie; Dai, Jing Jie; Lin, Der Yuh; Chang, Chung Ying; Lai, Zhao Xu; Hong, C. S.
In: Applied Physics Letters, Vol. 88, No. 8, 083121, 03.03.2006.Research output: Contribution to journal › Article
TY - JOUR
T1 - High-efficiency InGaN -based light-emitting diodes with nanoporous GaN:Mg structure
AU - Lin, Chia Feng
AU - Zheng, Jing Hui
AU - Yang, Zhong Jie
AU - Dai, Jing Jie
AU - Lin, Der Yuh
AU - Chang, Chung Ying
AU - Lai, Zhao Xu
AU - Hong, C. S.
PY - 2006/3/3
Y1 - 2006/3/3
N2 - In this research nanoporous structures on p -type GaN:Mg and n -type GaN:Si surfaces were fabricated through a photoelectrochemical (PEC) oxidation and an oxide-removing process. The photoluminescence (PL) intensities of GaN and InGaNGaN multi-quantum-well (MQW) structures were enhanced by forming this nanoporous structure to increase light extraction efficiency. The PL emission peaks of an MQW active layer have a blueshift phenomenon from 465.5 nm (standard) to 456.0 nm (nanoporous) measured at 300 K which was caused by partially releasing the compressive strain from the top GaN:Mg layers. The internal quantum efficiency could be increased by a partial strain release that induces a lower piezoelectric field in the active layer. The thermal activation energy of a nanoporous structure (85 meV) is higher than the standard one (33 meV) from a temperature dependent PL measurement. The internal quantum efficiency and light extraction efficiency of an InGaNGaN MQW active layer are significantly enhanced by this nanoporous GaN:Mg surface, and this PEC treated nanoporous structure is suitable for high-power lighting applications.
AB - In this research nanoporous structures on p -type GaN:Mg and n -type GaN:Si surfaces were fabricated through a photoelectrochemical (PEC) oxidation and an oxide-removing process. The photoluminescence (PL) intensities of GaN and InGaNGaN multi-quantum-well (MQW) structures were enhanced by forming this nanoporous structure to increase light extraction efficiency. The PL emission peaks of an MQW active layer have a blueshift phenomenon from 465.5 nm (standard) to 456.0 nm (nanoporous) measured at 300 K which was caused by partially releasing the compressive strain from the top GaN:Mg layers. The internal quantum efficiency could be increased by a partial strain release that induces a lower piezoelectric field in the active layer. The thermal activation energy of a nanoporous structure (85 meV) is higher than the standard one (33 meV) from a temperature dependent PL measurement. The internal quantum efficiency and light extraction efficiency of an InGaNGaN MQW active layer are significantly enhanced by this nanoporous GaN:Mg surface, and this PEC treated nanoporous structure is suitable for high-power lighting applications.
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U2 - 10.1063/1.2178477
DO - 10.1063/1.2178477
M3 - Article
AN - SCOPUS:33644522731
VL - 88
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 8
M1 - 083121
ER -