High-efficiency InGaN -based light-emitting diodes with nanoporous GaN:Mg structure

Chia Feng Lin, Jing Hui Zheng, Zhong Jie Yang, Jing Jie Dai, Der Yuh Lin, Chung Ying Chang, Zhao Xu Lai, C. S. Hong

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Abstract

In this research nanoporous structures on p -type GaN:Mg and n -type GaN:Si surfaces were fabricated through a photoelectrochemical (PEC) oxidation and an oxide-removing process. The photoluminescence (PL) intensities of GaN and InGaNGaN multi-quantum-well (MQW) structures were enhanced by forming this nanoporous structure to increase light extraction efficiency. The PL emission peaks of an MQW active layer have a blueshift phenomenon from 465.5 nm (standard) to 456.0 nm (nanoporous) measured at 300 K which was caused by partially releasing the compressive strain from the top GaN:Mg layers. The internal quantum efficiency could be increased by a partial strain release that induces a lower piezoelectric field in the active layer. The thermal activation energy of a nanoporous structure (85 meV) is higher than the standard one (33 meV) from a temperature dependent PL measurement. The internal quantum efficiency and light extraction efficiency of an InGaNGaN MQW active layer are significantly enhanced by this nanoporous GaN:Mg surface, and this PEC treated nanoporous structure is suitable for high-power lighting applications.

Original languageEnglish
Article number083121
JournalApplied Physics Letters
Volume88
Issue number8
DOIs
Publication statusPublished - 2006 Mar 3

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, C. F., Zheng, J. H., Yang, Z. J., Dai, J. J., Lin, D. Y., Chang, C. Y., Lai, Z. X., & Hong, C. S. (2006). High-efficiency InGaN -based light-emitting diodes with nanoporous GaN:Mg structure. Applied Physics Letters, 88(8), [083121]. https://doi.org/10.1063/1.2178477