High-efficiency deep-ultraviolet light-emitting diodes with efficient carrier confinement and high light extraction

Jih Yuan Chang, Bo Ting Liou, Man Fang Huang, Ya Hsuan Shih, Fang Ming Chen, Yen Kuang Kuo

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5 Citations (Scopus)

Abstract

In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, the capability of carrier confinement and properties of optical polarization are analyzed in detail. The simulation results show that LED structure with Al 0.64 Ga 0.36 N QBs, n-Al 0.7 Ga 0.3 N layer, and 4-nm-thick QWs, which has a peak emission wavelength of 284.5 nm at 60 mA, exhibits high internal quantum efficiency of 25% and high degree of optical polarization of 0.874.

Original languageEnglish
Article number8598952
Pages (from-to)976-982
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume66
Issue number2
DOIs
Publication statusPublished - 2019 Feb

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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