High-efficiency deep-ultraviolet light-emitting diodes with efficient carrier confinement and high light extraction

Jih-Yuan Chang, Bo Ting Liou, Man-Fang Huang, Ya Hsuan Shih, Fang Ming Chen, Yen-Kuang Kuo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, the capability of carrier confinement and properties of optical polarization are analyzed in detail. The simulation results show that LED structure with Al 0.64 Ga 0.36 N QBs, n-Al 0.7 Ga 0.3 N layer, and 4-nm-thick QWs, which has a peak emission wavelength of 284.5 nm at 60 mA, exhibits high internal quantum efficiency of 25% and high degree of optical polarization of 0.874.

Original languageEnglish
Article number8598952
Pages (from-to)976-982
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume66
Issue number2
DOIs
Publication statusPublished - 2019 Feb 1

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Light polarization
Light emitting diodes
Semiconductor quantum wells
Quantum efficiency
Wavelength
Ultraviolet Rays

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{646a09a7e3d64d3fb28e24506e93800a,
title = "High-efficiency deep-ultraviolet light-emitting diodes with efficient carrier confinement and high light extraction",
abstract = "In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, the capability of carrier confinement and properties of optical polarization are analyzed in detail. The simulation results show that LED structure with Al 0.64 Ga 0.36 N QBs, n-Al 0.7 Ga 0.3 N layer, and 4-nm-thick QWs, which has a peak emission wavelength of 284.5 nm at 60 mA, exhibits high internal quantum efficiency of 25{\%} and high degree of optical polarization of 0.874.",
author = "Jih-Yuan Chang and Liou, {Bo Ting} and Man-Fang Huang and Shih, {Ya Hsuan} and Chen, {Fang Ming} and Yen-Kuang Kuo",
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High-efficiency deep-ultraviolet light-emitting diodes with efficient carrier confinement and high light extraction. / Chang, Jih-Yuan; Liou, Bo Ting; Huang, Man-Fang; Shih, Ya Hsuan; Chen, Fang Ming; Kuo, Yen-Kuang.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 2, 8598952, 01.02.2019, p. 976-982.

Research output: Contribution to journalArticle

TY - JOUR

T1 - High-efficiency deep-ultraviolet light-emitting diodes with efficient carrier confinement and high light extraction

AU - Chang, Jih-Yuan

AU - Liou, Bo Ting

AU - Huang, Man-Fang

AU - Shih, Ya Hsuan

AU - Chen, Fang Ming

AU - Kuo, Yen-Kuang

PY - 2019/2/1

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AB - In deep-ultraviolet (DUV) light-emitting diodes (LEDs), it is difficult to obtain both efficient carrier confinement and high light extraction, which are quite sensitive to optical polarization and other physical parameters. In this paper, characteristics of DUV LEDs with various n-AlGaN layers and quantum barriers (QBs), and various widths of quantum wells (QWs) are investigated. Specifically, the capability of carrier confinement and properties of optical polarization are analyzed in detail. The simulation results show that LED structure with Al 0.64 Ga 0.36 N QBs, n-Al 0.7 Ga 0.3 N layer, and 4-nm-thick QWs, which has a peak emission wavelength of 284.5 nm at 60 mA, exhibits high internal quantum efficiency of 25% and high degree of optical polarization of 0.874.

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